Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2

Transcription factor YY1 is essential for regulation of the Th2 cytokine locus and for Th2 cell differentiation

The Th2 locus control region (LCR) has been shown to be important in efficient and coordinated cytokine gene regulation during Th2 cell differentiation. However, the molecular mechanism for this is poorly understood. To study the molecular mechanism of the Th2 LCR, we searched for proteins binding to it. We discovered that transcription factor YY1 bound to the LCR and the entire Th2 cytokine locus in a Th2-specific manner. Retroviral overexpression of YY1 induced Th2 cytokine expression. CD4-specific knockdown of YY1 in mice caused marked reduction in Th2 cytokine expression, repressed chromatin remodeling, decreased intrachromosomal interactions, and resistance in an animal model of asthma. YY1 physically associated with GATA-binding protein-3 (GATA3) and is required for GATA3 binding to the locus. YY1 bound to the regulatory elements in the locus before GATA3 binding. Thus, YY1 cooperates with GATA3 and is required for regulation of the Th2 cytokine locus and Th2 cell differentiation

Electrothermal soft manipulator enabling safe transport and handling of thin cell/tissue sheets and bioelectronic devices

“Living” cell sheets or bioelectronic chips have great potentials to improve the quality of diagnostics and therapies. However, handling these thin and delicate materials remains a grand challenge because the external force applied for gripping and releasing can easily deform or damage the materials. This study presents a soft manipulator that can manipulate and transport cell/tissue sheets and ultrathin wearable biosensing devices seamlessly by recapitulating how a cephalopod’s suction cup works. The soft manipulator consists of an ultrafast thermo-responsive, microchanneled hydrogel layer with tissue-like softness and an electric heater layer. The electric current to the manipulator drives microchannels of the gel to shrink/expand and results in a pressure change through the microchannels. The manipulator can lift/detach an object within 10 s and can be used repeatedly over 50 times. This soft manipulator would be highly useful for safe and reliable assembly and implantation of therapeutic cell/tissue sheets and biosensing devices

Electrical properties of lead-free 0.98(Na0.5K0.5)NbO3-0.02Ba(Zr0.52Ti0.48)O3 piezoelectric ceramics by optimizing sintering temperature

Lead-free 0.98(Na(0.5)K(0.5))NbO(3)-0.02Ba(Zr(0.52)Ti(0.48))O(3 )[0.98NKN-0.02BZT] ceramics were fabricated by the conventional mixed oxide method with sintering temperature at 1,080°C to 1,120°C. The results indicate that the sintering temperature obviously influences the structural and electrical properties of the sample. For the 0.98NKN-0.02BZT ceramics sintered at 1,080°C to 1,120°C, the bulk density increased with increasing sintering temperature and showed a maximum value at a sintering temperature of 1,090°C. The dielectric constant, piezoelectric constant [d(33)], electromechanical coupling coefficient [k(p)], and remnant polarization [P(r)] increased with increasing sintering temperature, which might be related to the increase in the relative density. However, the samples would be deteriorated when they are sintered above the optimum temperature. High piezoelectric properties of d(33 )= 217 pC/N, k(p )= 41%, dielectric constant = 1,951, and ferroelectric properties of P(r )= 10.3 μC/cm(2 )were obtained for the 0.98NKN-0.02BZT ceramics sintered at 1,090°C for 4 h

DENSIFICATION AND FERROELECTRIC PROPERTIES OF PZT(60/40) THICK FILMS FABRICATED BY SCREEN-PRINTING METHOD

Ferroelectric PbZr0.6Ti0.4O3 (PZT) thick films were fabricated using a combination of screen-printing method and PZT precursor sol coating process (M. Koch, N. Harris, R. Maas, A. G. R. Evans, N. M. White and A. Brunnschweiler, Meas. Sci. Technol. 8 (1997) 49; Y. S. Yoon, J. Korean. Phys. Soc. 47 (2005) 321). Structural and electrical properties of the PZT thick films with the treatment of sol coating were investigated. The porosity decreased and the densification was enhanced with increasing the number of sol coatings. All PZT thick films showed the typical X-ray diffraction patterns of a perovskite polycrystalline structure. The thickness of all thick films was approximately 60–61 μm. The relative dielectric constant increased and dielectric loss decreased with increasing the number of sol coatings, and the values of the six-layer PZT-6 film were 167.8, 0.78% at 1 kHz, respectively. The remanent polarization and coercive field of the 6-coated PZT-6 thick films were 14.1 μC/cm2 and 20.3 kV/cm, respectively.Sol–gel, thick films, PZT, densification, ferroelectric

A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors

Abstract A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-inverter) has been successfully implemented, which showed an unprecedentedly high static noise margin of 85% for binary logic operation and 59% for ternary logic operation, as well as long-term stability and outstanding cycle endurance. Furthermore, a ternary/binary dynamic logic conversion-in-memory has been demonstrated using a serially-connected R-inverter chain. The ternary/binary dynamic logic conversion-in-memory could generate three different output logic sequences for the same input signal in three logic levels, which is a new logic computing method that has never been presented before