In-Line Ultrasonic Monitoring for Sediments Stuck on Inner Wall of a Polyvinyl Chloride Pipe

This research verified the applicability and effectiveness of the ultrasonic monitoring of sediments stuck on the inner wall of polyvinyl chloride (PVC) pipes. For identifying the transmittance of acoustic energy and the speed of sound in the PVC material, the pulse-echo ultrasonic testing was conducted for PVC sheets of different thicknesses. To simulate the solidified sediment, the hot melt adhesive (HMA) was covered on the inner wall of the PVC pipe in different heights. From the experiment, the speeds of sound in the PVC and the HMA materials were obtained as about 2258 and 2000 m/s, respectively. The thickness of the materials was calculated through the signal processing such as taking the absolute value and low pass filtering, the echo detection, and the measurement of the time of flight. The errors between actual and measured thicknesses of PVC sheets were below 5%. In the case of the substance stuck on the inner wall, the errors were below 2.5%. Since the pulse-echo ultrasonic inspection is available on the outer surface and its measurement accuracy was over 95%, it can be an efficient and effective in-service structural health monitoring for the sediment on the wall of PVC pipes

Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin films. However, there are few reports on the effects of oxygen deficiencies on the switching dynamics of the ferroelectric phase itself. Herein, we report the oxygen- deficiency induced enhancement of ferroelectric switching properties of Si-doped HfO2 thin films. By controlling the annealing conditions, we controlled the oxygen deficiency concentration in the ferroelectric orthorhombic HfO2 phase. Rapid high-temperature (800 degrees C) annealing of the HfO2 film accelerated the characteristic switching speed compared to low-temperature (600 degrees C) annealing. Scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) revealed that thermal annealing increased oxygen deficiencies, and first-principles calculations demonstrated a reduction of the energy barrier of the polarization flip with increased oxygen deficiency. A Monte Carlo simulation for the variation in the energy barrier of the polarization flipping confirmed the increase of characteristic switching speed

In-Line Ultrasonic Monitoring for Sediments Stuck on Inner Wall of a Polyvinyl Chloride Pipe

This research verified the applicability and effectiveness of the ultrasonic monitoring of sediments stuck on the inner wall of polyvinyl chloride (PVC) pipes. For identifying the transmittance of acoustic energy and the speed of sound in the PVC material, the pulse-echo ultrasonic testing was conducted for PVC sheets of different thicknesses. To simulate the solidified sediment, the hot melt adhesive (HMA) was covered on the inner wall of the PVC pipe in different heights. From the experiment, the speeds of sound in the PVC and the HMA materials were obtained as about 2258 and 2000 m/s, respectively. The thickness of the materials was calculated through the signal processing such as taking the absolute value and low pass filtering, the echo detection, and the measurement of the time of flight. The errors between actual and measured thicknesses of PVC sheets were below 5%. In the case of the substance stuck on the inner wall, the errors were below 2.5%. Since the pulse-echo ultrasonic inspection is available on the outer surface and its measurement accuracy was over 95%, it can be an efficient and effective in-service structural health monitoring for the sediment on the wall of PVC pipes

Conditional radiation tolerance of ferroelectric Hf0.5Zr0.5O2 thin film under Co-60 gamma-ray irradiation

We report the effect of Co-60 gamma-ray irradiation on the ferroelectric properties of metal-ferroelectric Hf0.5Zr0.5O2-metal thin film structures. The pristine Hf0.5Zr0.5O2 films showed strong radiation tolerance against gamma-rays with stable remanant polarization values. When Hf0.5Zr0.5O2 films were exposed to electric field cycling, or "wake-up " process, prior to irradiation, however, their ferroelectricity demonstrated a clear degradation of remanant polarization and coercive voltage shift of the hysteresis curves. The analysis of ferroelectric switching dynamics revealed faster polarization switching with broadening of Lorentzian distribution of characteristic switching time for higher radiation doses, which is contrary to the wake-up behavior. The relationship between the wake-up process and gamma-ray irradiation on the stability of ferroelectric Hf0.5Zr0.5O2 films was discussed in light of domain alignment and defect mechanisms, considering both the redistribution and trapping of defect charges.& nbsp;Published under an exclusive license by AIP Publishing.N

The phosphatidylinositol 3-phosphate effector FYVE3 regulates FYVE2-dependent autophagy in Arabidopsis thaliana

Phosphatidylinositol 3-phosphate (PI3P) is a signaling phospholipid that play a key role in endomembrane trafficking, specifically autophagy and endosomal trafficking. However, the mechanisms underlying the contribution of PI3P downstream effectors to plant autophagy remain unknown. Known PI3P effectors for autophagy in Arabidopsis thaliana include ATG18A (Autophagy-related 18A) and FYVE2 (Fab1p, YOTB, Vac1p, and EEA1 2), which are implicated in autophagosome biogenesis. Here, we report that FYVE3, a paralog of plant-specific FYVE2, plays a role in FYVE2-dependent autophagy. Using yeast two-hybrid and bimolecular fluorescence complementation assays, we determined that the FYVE3 protein was associated with autophagic machinery containing ATG18A and FYVE2, by interacting with ATG8 isoforms. The FYVE3 protein was transported to the vacuole, and the vacuolar delivery of FYVE3 relies on PI3P biosynthesis and the canonical autophagic machinery. Whereas the fyve3 mutation alone barely affects autophagic flux, it suppresses defective autophagy in fyve2 mutants. Based on the molecular genetics and cell biological data, we propose that FYVE3 specifically regulates FYVE2-dependent autophagy

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures. © 2018 Author(s

Direct Observation of Ferroelastic Domain Switching in Yttrium Doped HfO2 Freestanding Membrane

2

Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials

Recently, 2D materials have been intensively studied as emerging materials for future electronics, including flexible electronics, photonics, and electro-chemical energy storage devices. Among representative 2D materials (such as graphene, boron nitride, and transition metal dichalcogenides) that exhibit extraordinary properties, graphene stands out in the flexible electronics field due to its combination of high electron mobility, high thermal conductivity, high specific surface area, high optical transparency, excellent mechanical flexibility, and environmental stability. This review covers the synthesis, transfer, and characterization methods of graphene and 2D materials and graphene's application to flexible devices as well as comparison with other competing materials