Third-order Intermodulation Reduction in Mobile Power Amplifiers by the First Stage Bias Control

In this paper, the third order intermodulation distortion (IMD3) of three-stage power amplifier (PA) is analyzed using the Volterra series. The analysis explains how the total IMD3 of the three-stage power amplifier can be reduced by the first-stage bias condition. The three-stage PA, which is fabricated using InGaP/GaAs hetero-junction bipolar transistor (HBT), operates with an optimized first driver stage bias for higher P1dB and good gain flatness. The power amplifier has been designed for 1626.5 MHz~1660.5 MHz satellite mobile communications. With π/4 DQPSK modulation signals, this PA can deliver a highly linear output power of 33 dBm from 3.6V supply voltage. At 33 dBm output power, it shows a gain of 31.9 dB, a power-added efficiency (PAE) of 39.8%, an adjacent channel power ratio (ACPR) of -28.2 dBc at a 31.25 KHz offset frequency

Scanning tunneling spectroscopic studies of the pairing state of cuprate superconductors

Quasiparticle tunneling spectra of both hole-doped (p-type) and electron-doped (n-type) cuprates are studied using a low-temperature scanning tunneling microscope. The results reveal that neither the pairing symmetry nor the pseudogap phenomenon is universal among all cuprates, and that the response of n-type cuprates to quantum impurities is drastically different from that of the p-type cuprates. The only ubiquitous features among all cuprates appear to be the strong electronic correlation and the nearest-neighbor antiferromagnetic Cu2+-Cu2+ coupling in the CuO2 planes

Spectroscopic Evidence for Anisotropic S-Wave Pairing Symmetry in MgB2

Scanning tunneling spectroscopy of superconducting MgB$_2$ ($T_c = 39$ K) were studied on high-density pellets and c-axis oriented films. The sample surfaces were chemically etched to remove surface carbonates and hydroxides, and the data were compared with calculated spectra for all symmetry-allowed pairing channels. The pairing potential ($\Delta_k$) is best described by an anisotropic s-wave pairing model, with $\Delta_k = \Delta_{xy} \sin ^2 \theta_k + \Delta_z \cos ^2 \theta_k$, where $\theta_k$ is the angle relative to the crystalline c-axis, $\Delta_z \sim 8.0$ meV, and $\Delta_{xy} \sim 5.0$ meV.Comment: 4 pages and 3 figures. Submitted to Physical Review Letters. Corresponding author: Nai-Chang Yeh (e-mail: [email protected]

Dynamical mean-field theory of Hubbard-Holstein model at half-filling: Zero temperature metal-insulator and insulator-insulator transitions

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical renormalization group technique. A zero temperature phase diagram of metal-insulator and insulator-insulator transitions at half-filling is mapped out which exhibits the interplay between $U$ and $g$. As $U$ ($g$) is increased, a metal to Mott-Hubbard insulator (bipolaron insulator) transition occurs, and the two insulating states are distinct and can not be adiabatically connected. The nature of and transitions between the three states are discussed.Comment: 5 pages, 4 figures. Submitted to Physical Review Letter

Effect of sintering temperature under high pressure in the uperconductivity for MgB2

We report the effect of the sintering temperature on the superconductivity of MgB2 pellets prepared under a high pressure of 3 GPa. The superconducting properties of the non-heated MgB2 in this high pressure were poor. However, as the sintering temperature increased, the superconducting properties were vastly enhanced, which was shown by the narrow transition width for the resistivity and the low-field magnetizations. This shows that heat treatment under high pressure is essential to improve superconducting properties. These changes were found to be closely related to changes in the surface morphology observed using scanning electron microscopy.Comment: 3 Pages including 3 figure