Confocal nonlinear optical imaging on hexagonal boron nitride nanosheets

Optical microscopy with optimal axial resolution is critical for precise visualization of two-dimensional flat-top structures. Here, we present sub-diffraction-limited ultrafast imaging of hexagonal boron nitride (hBN) nanosheets using a confocal focus-engineered coherent anti-Stokes Raman scattering (cFE-CARS) microscopic system. By incorporating a pinhole with a diameter of approximately 30μm, we effectively minimized the intensity of side lobes induced by circular partial pi-phase shift in the wavefront (diameter, d0) of the probe beam, as well as nonresonant background CARS intensities. Using axial-resolution-improved cFE-CARS (acFE-CARS), the achieved axial resolution is 350nm, exhibiting a 4.3-folded increase in the signal-to-noise ratio compared to the previous case with 0.58 d0 phase mask. This improvement can be accomplished by using a phase mask of 0.24 d0. Additionally, we employed nondegenerate phase matching with three temporally separable incident beams, which facilitated cross-sectional visualization of highly-sample-specific and vibration-sensitive signals in a pump-probe fashion with subpicosecond time resolution. Our observations reveal time-dependent CARS dephasing in hBN nanosheets, induced by Raman-free induction decay (0.66ps) in the 1373cm−1 mode. © 2023, Chinese Society for Optical Engineering.TRU

Sub 100 nm resolution confocal focus-engineered coherent anti-Stokes Raman scattering microscopy under non-degenerate pumping condition

For the development of microscopic tools that can resolve non-fluorescent samples beyond the diffraction limit, we propose focus-engineered non-degenerate pumped coherent anti-Stokes Raman scattering (CARS) using spa-tial light modulator (SLM)-based phase shaping, liquid lens focus control, and confocal detection. Non-degenerate pumped CARS (ND-CARS) with frequency-doubled probe pulses resulted in approximately 75% improvement in resolution compared to that of degenerate CARS. Focal adjustment using the liquid lens facilitated the accurate overlapping of three beams. The circular pi-phase modulation at the center of the probe-beam wavefront demar-cated the net CARS focal volume into a sub 100 nm-scale core and surrounding side lobes. The confocal geometry detection setup successfully removed the side lobes, allowing optical imaging of 81 nm-sized zinc oxide particles at 87 nm, and edge-to-edge resolution was determined to be 103 nm.FALS

Gold-Nanoparticle Layer Substrate Assisted Transmission-Mode Laser Desorption for Atmospheric Pressure Mass Spectrometry Imaging

We demonstrate continuous-wave laser-based ambient mass spectrometry imaging with the use of a gold-nanoparticle layer substrate. When a fresh tissue slice is placed on a gold-nanoparticle layer substrate and irradiated with a 532-nm continuous-wave laser, the transmission-mode laser configuration provides precise desorption performance to facilitate mass spectrometry imaging. The subsequent ionization process with non-thermal atmospheric pressure plasma jets generates sufficient amounts of molecular ions. By using this method, micrometer-spatial-resolution mass spectrometry imaging of humid tissues can be obtained. The gold-nanoparticle layer substrates can be prepared and stored in advance of the experiment, resulting in simplified specimen preparation and an advantage in faster preparing of fresh tissue specimen for analysis.1

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS₂ Thin Film Transistors

Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs. Here, we report a strain engineering approach to apply the biaxial tensile strain to MoS2. Metal-organic chemical vapour deposition (MOCVD)-grown large-area MoS2 films were transferred onto SiO2/Si substrate, followed by the selective removal of the underneath Si. The release of compressive residual stress in the oxide layer induces strain in MoS2 on top of the SiO2 layer. The amount of strain can be precisely controlled by the thickness of oxide stressors. After the transistors were fabricated with strained MoS2 films, the array of strained transistors was transferred onto plastic substrates. This process ensured that the MoS2 channels maintained a consistent tensile strain value across a large area