Reliable current changes with selectivity ratio above 10(9) observed in lightly doped zinc oxide films

Low-power operation of semiconductor devices is crucial for energy conservation. In particular, energy-efficient devices are essential in portable electronic devices to allow for extended use with a limited power supply. However, unnecessary currents always exist in semiconductor devices, even when the device is in its off state. To solve this problem, it is necessary to use switch devices that can turn active devices on and off effectively. For this purpose, high on/off current selectivity with ultra-low off-current and high on-current is required. Here, we report a novel switch behavior with over 10(9) selectivity, a high on-current density of 1 MA cm(-2), an ultra-low off-current density of 1 mA cm(-2), excellent thermal stability up to 250 degrees C and abrupt turn-on with 5 mV per decade in solution-processed silver-doped zinc oxide thin films. The selection behavior is attributed to light doping of silver ions in zinc oxide films during electrochemical deposition to generate atomic-scale narrow conduction paths, which can be formed and ruptured at low voltages. Device simulation showed that the new selector devices may be used in ultra-high-density memory devices to provide excellent operation margins and extremely low power consumption.1110Ysciescopu

Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

Mixed halide perovskite materials are actively researched for solar cells with high efficiency. Their hysteresis which originates from the movement of defects make perovskite a candidate for resistive switching memory devices. We demonstrate the resistive switching device based on mixed-halide organic-inorganic hybrid perovskite CH3NH3PbI3−xBrx (x = 0, 1, 2, 3). Solvent engineering is used to deposit the homogeneous CH3NH3PbI3−xBrx layer on the indium-tin oxide-coated glass substrates. The memory device based on CH3NH3PbI3−xBrx exhibits write endurance and long retention, which indicate reproducible and reliable memory properties. According to the increase in Br contents in CH3NH3PbI3−xBrx the set electric field required to make the device from low resistance state to high resistance state decreases. This result is in accord with the theoretical calculation of migration barriers, that is the barrier to ionic migration in perovskites is found to be lower for Br− (0.23 eV) than for I− (0.29–0.30 eV). The resistive switching may be the result of halide vacancy defects and formation of conductive filaments under electric field in the mixed perovskite layer. It is observed that enhancement in operating voltage can be achieved by controlling the halide contents in the film.1119Ysciescopu

Integrated Casino Resort Plan in Korea: The Perception of Korean Government Representatives

The Asian casino market has been rapidly expanding in recent years as evidenced by the success of recently built integrated resorts (IR) in Macau. In light of the successes in Macau, the Korean government has decided to allow an IR to be built near the Incheon International Airport in Korea. The airport, with its great number of transient passengers, provides ample potential customers for the proposed IR. Combining the two factors of Asian casino market growth, and the high number of potential customers, the Incheon IR has a great chance for success. The Korean government entertained bids from two different companies for the business license for the Incheon IR, Caesars Entertainment and Paradise-Sega Sammy. Based on business experience, capital, and size, the two companies were very comparable. The eventual winner of the business license was Paradise-Sega Sammy. The purpose of this research is to investigate the factors that led to the choice of Paradise-Sega Sammy as the winner. This research will investigate the extent to which the personal opinions of government officials impacted the award decision. It will also uncover which of the opinions had the most influence on the decision. The researcher conducted interviews with select Korean government representatives and collect their opinions. This qualitative approach will allow for a deeper understanding of the decision criteria. This research will provide value through the insights discovered, thus enabling future businesses to be better prepared to enter the Korean casino market

Charge state of vacancy defects in Eu-doped GaN

Eu ions have been doped into GaN in order to achieve red luminescence under current injection, where coupling between the Eu ions and intrinsic defects such as vacancies are known to play an important role. However, the charge state of the vacancies and the impact it would have on the optical and magnetic properties of the Eu ions have not been explored. Through a combination of first-principle calculations and experimental results, the influence of the charge state of the defect environment surrounding the Eu ions has been investigated. We have identified two Eu centers that are related through the charge state of a local vacancy defect. These two centers were found to exhibit a mutual metastability, such that each center can be excited in one configuration and emit as the other. This metastability was found to be dependent on temperature and the wavelength of the excitation laser. Furthermore, one of these centers was found to have an effective magnetic g factor that is substantially larger than what is expected for an isolated Eu3+ ion and is explained by a change in the charge state of the defect environment around the Eu. This prediction could also offer a new explanation for the saturation magnetization previously observed in GaN : Eu and other GaN: RE systems.112Ysciescopu

Stability and Charge Transfer Levels of Extrinsic Defects in LiNbO₃

The technologically important incorporation of extrinsic defects (Mg2+, Fe2+, Fe3+, Er3+, and Nd3+) in LiNbO3 is investigated using density-functional theory combined with thermodynamic calculations. Defect energies, the charge compensation mechanisms, and charge transfer levels, are determined for congruent and stoichiometric compositions. In general, under congruent (Nb2O5-rich) conditions impurities occupy lithium sites, compensated by lithium vacancies. Under stoichiometric (Li2O-rich) conditions, impurities occupy both lithium and niobium sites. The effects of the concentration of Mg on the dominant defect and site occupancy are analyzed. In addition, the thermal ionization energy and relative defect stability order for Fe2+ and Fe3+ are evaluated. The charge transfer levels of impurities with regard to the band structure, and their influences on the optical properties of the material are elucidated

Entangling three identical particles via spatial overlap

Quantum correlations between identical particles are at the heart of quantum technologies. Several studies with two identical particles have shown that the spatial overlap and indistinguishability between the particles are necessary for generating bipartite entanglement. On the other hand, researches on the extension to more than two-particle systems are limited by the practical difficulty to control multiple identical particles in laboratories. In this work, we propose schemes to generate two fundamental classes of genuine tripartite entanglement, i.e., GHZ and W classes, which are experimentally demonstrated with three identical photons. We also show that the tripartite entanglement class decays from the genuine entanglement to the full separability as the particles become more distinguishable from each other. Our results support the prediction that particle indistinguishability is a fundamental element for entangling identical particles.Comment: 12 pages including appendix, 5 figures. Comments are welcom