A Financing Model to Solve Financial Barriers for Implementing Green Building Projects

Along with the growing interest in greenhouse gas reduction, the effect of greenhouse gas energy reduction from implementing green buildings is gaining attention. The government of the Republic of Korea has set green growth as its paradigm for national development, and there is a growing interest in energy saving for green buildings. However, green buildings may have financial barriers that have high initial construction costs and uncertainties about future project value. Under the circumstances, governmental support to attract private funding is necessary to implement green building projects. The objective of this study is to suggest a financing model for facilitating green building projects with a governmental guarantee based on Certified Emission Reduction (CER). In this model, the government provides a guarantee for the increased costs of a green building project in return for CER. And this study presents the validation of the model as well as feasibility for implementing green building project. In addition, the suggested model assumed governmental guarantees for the increased cost, but private guarantees seem to be feasible as well because of the promising value of the guarantee from CER. To do this, certification of Clean Development Mechanisms (CDMs) for green buildings must be obtained

Charge transport modulation of a flexible quantum dot solar cell using a piezoelectric effect

Colloidal quantum dots are promising materials for flexible solar cells, as they have a large absorption coefficient at visible and infrared wavelengths, a band gap that can be tuned across the solar spectrum, and compatibility with solution processing. However, the performance of flexible solar cells can be degraded by the loss of charge carriers due to recombination pathways that exist at a junction interface as well as the strained interface of the semiconducting layers. The modulation of the charge carrier transport by the piezoelectric effect is an effective way of resolving and improving the inherent material and structural defects. By inserting a porous piezoelectric poly(vinylidenefluoride‐trifluoroethylene) layer so as to generate a converging electric field, it is possible to modulate the junction properties and consequently enhance the charge carrier behavior at the junction. This study shows that due to a reduction in the recombination and an improvement in the carrier extraction, a 38% increase in the current density along with a concomitant increase of 37% in the power conversion efficiency of flexible quantum dots solar cells can be achieved by modulating the junction properties using the piezoelectric effect

Nano-to-microporous networks via inkjet printing of ZnO nanoparticles/graphene hybrid for ultraviolet photodetectors

Inkjet-printed photodetectors have gained enormous attention over the past decade. However, device performance is limited without postprocessing, such as annealing and UV exposure. In addition, it is difficult to manipulate the surface morphology of the printed film using an inkjet printer because of the limited options of low viscosity ink solutions. Here, we employ a concept involving the control of the inkjet-printed film morphology via modulation of cosolvent vapor pressure and surface tension for the creation of a high-performance ZnO-based photodetector on a flexible substrate. The solvent boiling point across different cosolvent systems is found to affect the film morphology, which results in not only distinct photoresponse time but also photodetectivity. ZnO-based photodetectors were printed using different solvents, which display a fast photoresponse in low-boiling point solvents because of the low carbon residue and larger photodetectivity in high-boiling point solvent systems due to the porous structure. The porous structure is obtained using both gas–liquid surface tension differences and solid–liquid surface differences, and the size of porosity is modulated from nanosize to microsize depending on the ratio between two solvents or two nanomaterials. Moreover, the conductive nature of graphene enhances the transport behavior of the photocarrier, which enables a high-performance photodetector with high photoresponsivity (7.5 × 102AW–1) and fast photoresponse (0.18 s) to be achieved without the use of high-boiling point solvents

Consecutive Junction-Induced Efficient Charge Separation Mechanisms for High-Performance MoS2/Quantum Dot Phototransistors.

Phototransistors that are based on a hybrid vertical heterojunction structure of two-dimensional (2D)/quantum dots (QDs) have recently attracted attention as a promising device architecture for enhancing the quantum efficiency of photodetectors. However, to optimize the device structure to allow for more efficient charge separation and transfer to the electrodes, a better understanding of the photophysical mechanisms that take place in these architectures is required. Here, we employ a novel concept involving the modulation of the built-in potential within the QD layers for creating a new hybrid MoS2/PbS QDs phototransistor with consecutive type II junctions. The effects of the built-in potential across the depletion region near the type II junction interface in the QD layers are found to improve the photoresponse as well as decrease the response times to 950 μs, which is the faster response time (by orders of magnitude) than that recorded for previously reported 2D/QD phototransistors. Also, by implementing an electric-field modulation of the MoS2 channel, our experimental results reveal that the detectivity can be as large as 1 × 1011 jones. This work demonstrates an important pathway toward designing hybrid phototransistors and mixed-dimensional van der Waals heterostructures.The research leading to these results has received funding from the European Research Council under the European Union’s Seventh Framework Programme (FP/2007−2013)/ERC Grant Agreement no. 340538. This work was also supported by the National Research Foundation of Korea (NRF) (2015M2A2A6A02045252) and Samsung Global Research Outreach (Samsung GRO) program. In addition, S.M.M. would like to thank The Royal Society for financial support

Surface energy-mediated construction of anisotropic semiconductor wires with selective crystallographic polarity.

ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks. Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated. Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties

Spectral functions of CVD grown MoS2_2 monolayers after chemical transfer onto Au surface

The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain high-resolution ARPES spectra. Here, we show that by employing nano-ARPES with submicron sized beam and polystyrene-assisted transfer followed by annealing process in ultra-high vacuum environment, remarkably clear ARPES spectral features such as spin-orbit splitting and band renormalization of CVD-grown, monolayered MoS2 can be measured. Our finding paves a way to exploit chemically transferred crystals for measuring high-resolution ARPES spectra to observe exotic quasi-particles in vdW heterostructures

Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells.

In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport

Balancing charge carriertransport in a quantum dot P-N junction toward hysteresis-free high-performance solar cells

In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport

Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer.

van der Waals heterostructures composed of two different monolayer crystals have recently attracted attention as a powerful and versatile platform for studying fundamental physics, as well as having great potential in future functional devices because of the diversity in the band alignments and the unique interlayer coupling that occurs at the heterojunction interface. However, despite these attractive features, a fundamental understanding of the underlying physics accounting for the effect of interlayer coupling on the interactions between electrons, photons, and phonons in the stacked heterobilayer is still lacking. Here, we demonstrate a detailed analysis of the strain-dependent excitonic behavior of an epitaxially grown MoS2/WS2 vertical heterostructure under uniaxial tensile and compressive strain that enables the interlayer interactions to be modulated along with the electronic band structure. We find that the strain-modulated interlayer coupling directly affects the characteristic combined vibrational and excitonic properties of each monolayer in the heterobilayer. It is further revealed that the relative photoluminescence intensity ratio of WS2 to MoS2 in our heterobilayer increases monotonically with tensile strain and decreases with compressive strain. We attribute the strain-dependent emission behavior of the heterobilayer to the modulation of the band structure for each monolayer, which is dictated by the alterations in the band gap transitions. These findings present an important pathway toward designing heterostructures and flexible devices

Lattice marginal reconstruction enabled high ambient-tolerance Perovskite Quantum Dots phototransistors

Perovskite quantum dots (PeQDs) have been developed rapidly as photoactive materials in hybrid phototransistors because of their strong light absorption, broad bandgap customizability, and defect-tolerance in charge-transport properties. The solvent treatment has been well recognized as a practical approach for improving the charge transport of PeQDs and the photoresponsivity of PeQD phototransistors. However, there is a lack of fundamental understanding of the origin of its impacts on the material’s ambient stability as well as phototransistor’s operational lifetime. Especially, the relationship between surface ligands dissociation and their microstructural reconstruction has not been fully elucidated so far. Herein, we report that a simultaneous enhancement of photoresponsivity and ambient tolerance for PeQD-based hybrid phototransistors can be realized via medium-polarity-solvent treatment on solid-state PeQDs. Our comprehensive optoelectronic characterization and electron microscopic study reveals that the crystal morphology, instead of surface ligands, is the dominating factor that results in the PeQD’s stability enhancement associated with the preservation of optical property and quantum confinement. Besides, we unveil a marginal reconstruction process occurred during solvent treatment, which opens up a new route for facets-oriented attachment of PeQDs along the zone axis to suppress the damage from water molecules penetration. Our study yields a new understanding of the solvent impact on PeQD microstructures reconstruction and suggests new routes for perovskite materials and corresponding device operational stability enhancement