New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

Annual Proceedings - Reliability Physics (Symposium)311-317ARLP

A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

Solid State Electronics38101791-1798SSEL

Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique

Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA96-10123

Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Journal of Applied Physics8141992-2001JAPI

Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

Semiconductor Science and Technology139976-980SSTE

Comparative study of charge trapping effects in LDD surface-channel and buried-channel PMOS transistors using charge profiling and threshold voltage shift measurements

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA200-2050023

Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

10.1088/0022-3727/30/17/007Journal of Physics D: Applied Physics30172411-2420JPAP

Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysis

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA113-1180023