451 research outputs found
Synthesis and Properties of Coordination Compounds of Co(II) and Ni (II) with 3,4,5-Trimethoxybenzoylhydrazine
The synthesis of Co(Il) and Ni(II) complexes with 3,4,5-trimethoxybenzoylhydrazine HL of the formula M(HL)nX2. mH20
are reported. The complexes were prepared by the reaction of HL
with metal(II) nitrate, acetate, sulphate, and chloride. The magnetic
properties, infrared and electronic spectra show that metal(II)
is 6-coordinated, HL being bound as a bidentate (ON) Iigand
Synthesis and Properties of Coordination Compounds of Co(II) and Ni(II) with Some Hydrazone Derivatives
Reaction of some aroylhydrazones with Co(II) and Ni(II) salts
were investigated and the corresponding complexes were isolated.
Magnetic and spectral data showed that in the case of metal chloride
and nitrate octahedral complexes were formed, with Iigands
coordinated as neutral molecules. In the case of Ni(II) acetate square planar complexes and with Co(lI) acetate paramagnetic complexes were obtained, all of them with deprotonated Iigands
Finite-time stability analysis of fractional order time-delay systems: Gronwall's approach
In this paper, a stability test procedure is proposed for linear nonhomogeneous fractional order systems with a pure time delay. Some basic results from the area of finite time and practical stability are extended to linear, continuous, fractional order time-delay systems given in state-space form. Sufficient conditions of this kind of stability are derived for particular class of fractional time-delay systems. A numerical example is given to illustrate the validity of the proposed procedure
Evidence for electron-phonon interaction in FeMSb (M=Co, Cr) single crystals
We have measured polarized Raman scattering spectra of the
FeCoSb and FeCrSb (00.5)
single crystals in the temperature range between 15 K and 300 K. The highest
energy symmetry mode shows significant line asymmetry due to phonon
mode coupling width electronic background. The coupling constant achieves the
highest value at about 40 K and after that it remains temperature independent.
Origin of additional mode broadening is pure anharmonic. Below 40 K the
coupling is drastically reduced, in agreement with transport properties
measurements. Alloying of FeSb with Co and Cr produces the B mode
narrowing, i.e. weakening of the electron-phonon interaction. In the case of
A symmetry modes we have found a significant mode mixing
Crossbreeding of cattle: effects on milk production
International audienc
Optical properties of plastically deformed copper
Pure copper (99.99), prepared in the sample of square cross-section (10 x 10 mm2) and length about 50 mm, was extremely plastically deformed with the repeated application of Equal Channel Angular Pressing (ECAP). ECAP was applied as an effective technique for producing bulk nano-scaled structures. Optical properties of the sample were investigated using Raman spectroscopy. Two types of lines: narrow (with width of 7 cmĀ”1) and wide ( 40 cmĀ”1) are registered. Existence of two types of lines indicates that in the specimen exists nano-sized crystal structures of both Cu and CuO related with three dimensional amorphous boundary spaces, which indicates that plastic deformation of the sample did not lead to total amorphisation of the specimen
Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing
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