Synthesis and Properties of Coordination Compounds of Co(II) and Ni (II) with 3,4,5-Trimethoxybenzoylhydrazine

The synthesis of Co(Il) and Ni(II) complexes with 3,4,5-trimethoxybenzoylhydrazine HL of the formula M(HL)nX2. mH20 are reported. The complexes were prepared by the reaction of HL with metal(II) nitrate, acetate, sulphate, and chloride. The magnetic properties, infrared and electronic spectra show that metal(II) is 6-coordinated, HL being bound as a bidentate (ON) Iigand

Synthesis and Properties of Coordination Compounds of Co(II) and Ni(II) with Some Hydrazone Derivatives

Reaction of some aroylhydrazones with Co(II) and Ni(II) salts were investigated and the corresponding complexes were isolated. Magnetic and spectral data showed that in the case of metal chloride and nitrate octahedral complexes were formed, with Iigands coordinated as neutral molecules. In the case of Ni(II) acetate square planar complexes and with Co(lI) acetate paramagnetic complexes were obtained, all of them with deprotonated Iigands

Finite-time stability analysis of fractional order time-delay systems: Gronwall's approach

In this paper, a stability test procedure is proposed for linear nonhomogeneous fractional order systems with a pure time delay. Some basic results from the area of finite time and practical stability are extended to linear, continuous, fractional order time-delay systems given in state-space form. Sufficient conditions of this kind of stability are derived for particular class of fractional time-delay systems. A numerical example is given to illustrate the validity of the proposed procedure

Evidence for electron-phonon interaction in Fe1−x_{1-x}Mx_{x}Sb2_{2} (M=Co, Cr) single crystals

We have measured polarized Raman scattering spectra of the Fe$_{1-x}$Co$_{x}$Sb$_{2}$ and Fe$_{1-x}$Cr$_{x}$Sb$_{2}$ (0$\leq x\leq$0.5) single crystals in the temperature range between 15 K and 300 K. The highest energy $B_{1g}$ symmetry mode shows significant line asymmetry due to phonon mode coupling width electronic background. The coupling constant achieves the highest value at about 40 K and after that it remains temperature independent. Origin of additional mode broadening is pure anharmonic. Below 40 K the coupling is drastically reduced, in agreement with transport properties measurements. Alloying of FeSb$_2$ with Co and Cr produces the B$_{1g}$ mode narrowing, i.e. weakening of the electron-phonon interaction. In the case of A$_{g}$ symmetry modes we have found a significant mode mixing

Optical properties of plastically deformed copper

Pure copper (99.99), prepared in the sample of square cross-section (10 x 10 mm2) and length about 50 mm, was extremely plastically deformed with the repeated application of Equal Channel Angular Pressing (ECAP). ECAP was applied as an effective technique for producing bulk nano-scaled structures. Optical properties of the sample were investigated using Raman spectroscopy. Two types of lines: narrow (with width of 7 cm¡1) and wide ( 40 cm¡1) are registered. Existence of two types of lines indicates that in the specimen exists nano-sized crystal structures of both Cu and CuO related with three dimensional amorphous boundary spaces, which indicates that plastic deformation of the sample did not lead to total amorphisation of the specimen

Crossbreeding of cattle: effects on milk production

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Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing