Analytical approximations of the Lindhard equations describing radiation effects

Starting from the general Lindhard theory describing the partition of particles energy in materials between ionisation and displacements, analytical approximate solutions have been derived, for media containing one and more atomic species, for particles identical and different to the medium ones. Particular cases, and the limits of these equations at very high energies are discussed.Comment: 10 pages, 5 figures, latex2e, submitted to Nucl. Instr. Meth. in Phys. Res.

The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.Comment: 14 pages, 8 figures, submitted to Nucl. Instrum. Meth. Phys. Res.

Annealing of radiation induced defects in silicon in a simplified phenomenological model

The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials, that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of the incident particles, for different temperatures; the corresponding stationary solutions are also presented.Comment: 14 pages, 5 figures, accepted to Nuclear Instruments and Methods in Physics Research B second version, major revisio

Theoretical calculations of the primary defects induced by pions and protons in SiC

In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.Comment: 9 pages, 2 figures, in press to Nuclear Instruments and Methods in Physics Research A v2 - modified title, and major revision

Diamond degradation in hadron fields

The energy dependence of the concentration of primary displacements induced by protons and pions in diamond has been calculated in the energy range 50 MeV - 50 GeV, in the frame of the Lindhard theory. The concentrations of primary displacements induced by protons and pions have completely different energy dependencies: the proton degradation is very important at low energies, and is higher than the pion one in the whole energy range investigated, with the exception of the delta33 resonance region. Diamond has been found, theoretically, to be one order of magnitude more resistant to proton and pion irradiation in respect to silicon.Comment: 7 pages, 3 figure

Comparative Energy Dependence of Proton and Pion Degradation in Diamond

A comparative theoretical study of the damages produced by protons and pions, in the energy range 50 MeV - 50 GeV, in diamond, is presented. The concentration of primary defects (CPD) induced by hadron irradiation is used to describe material degradation. The CPD has very different behaviours for protons and pions: the proton degradation is important at low energies and is higher than the pion one in the whole energy range investigated, with the exception of the Delta33 resonance region, where a large maximum of the degradation exists for pions. In comparison with silicon, the most investigated and the most studied material for detectors, diamond theoretically proves to be one order of magnitude more resistant, both to proton and pion irradiation.Comment: 7 pages, 5 figure