Tight-binding molecular-dynamics studies of defects and disorder in covalently-bonded materials

Tight-binding (TB) molecular dynamics (MD) has emerged as a powerful method for investigating the atomic-scale structure of materials --- in particular the interplay between structural and electronic properties --- bridging the gap between empirical methods which, while fast and efficient, lack transferability, and ab initio approaches which, because of excessive computational workload, suffer from limitations in size and run times. In this short review article, we examine several recent applications of TBMD in the area of defects in covalently-bonded semiconductors and the amorphous phases of these materials.Comment: Invited review article for Comput. Mater. Sci. (38 pages incl. 18 fig.

Island morphology and adatom self-diffusion on Pt(111)

The results of a density-functional-theory study of the formation energies of (100)- and (111)-faceted steps on the Pt(111) surface, as well as of the barrier for diffusion of an adatom on the flat surface, are presented. The step formation energies are found to be in a ratio of 0.88 in favour of the (111)-faceted step, in excellent agreement with experiment; the equilibrium shape of islands should therefore clearly be non-hexagonal. The origin of the difference between the two steps is discussed in terms of the release of stress at the surface through relaxation. For the diffusion barrier, we also find relaxation to be important, leading to a 20% decrease of its energy. The value we obtain, 0.33 eV, however remains higher than available experimental data; possible reasons for this discrepancy are discussed. We find the ratio of step formation energies and the diffusion barrier to be the same whether using the local-density approximation or the generalized-gradient approximation for the exchange-and-correlation energy.Comment: Submitted to Physical Review B; 11 postscript pages including 4 figures; this and related publications available from web sites at http://www.centrcn.umontreal.ca/~lewis and http://www.fhi-berlin.mpg.de/th/th.htm

Amorphous silicon under mechanical shear deformations: shear velocity and temperature effects

Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a systematic increase in the internal strain leading to the rapid appearance of structural defects (5-fold coordinated atoms). The impacts of externally applied strain can be almost fully compensated by increasing the temperature, allowing the system to respond more rapidly to the deformation. In particular, we find opposite power-law relations between the temperature and the shear velocity and the deformation energy. The spatial distribution of defects is also found to strongly depend on temperature and strain velocity. For low temperature or high shear velocity, defects are concentrated in a few atomic layers near the center of the cell while, with increasing temperature or decreasing shear velocity, they spread slowly throughout the full simulation cell. This complex behavior can be related to the structure of the energy landscape and the existence of a continuous energy-barrier distribution.Comment: 10 pages, 17 figure

Structural properties of silicon dioxide thin films densified by medium-energy particles

Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD) scenario. We compare the structures resulting from the deposition of near-thermal (1 eV) SiO$_{2}$ particles to those obtained with increasing fraction of 30 eV SiO$_{2}$ particles. Our results show that there is an energy interval - between 12 and 15 eV per condensing SiO$_2$ unit on average - for which the growth leads to a dense, low-stress amorphous structure, in satisfactory agreement with the results of low-energy ion-beam experiments. We also find that the crossover between low- and high-density films is associated with a tensile to compressive stress transition, and a simultaneous healing of structural defects of the {\em a-}SiO$_2$ network, namely three- and four-fold rings. It is observed, finally, that densification proceeds through significant changes at intermediate length scales (4--10 \AA), leaving essentially unchanged the ``building blocks'' of the network, viz. the Si(O$_{1/2}$)$_{4}$ tetrahedra. This latter result is in qualitative agreement with the mechanism proposed to explain the irreversible densification of amorphous silica recovered from high pressures ($\sim$ 15--20 GPa).Comment: 12 pages including 10 postscript figures; submitted to Phys. Rev. B; related publications can be found on web site http://www.centrcn.umontreal.ca/~lewi

Isochoric, isobaric and ultrafast conductivities of aluminum, lithium and carbon in the warm dense matter (WDM) regime

We study the conductivities $\sigma$ of (i) the equilibrium isochoric state ($\sigma_{\rm is}$), (ii) the equilibrium isobaric state ($\sigma_{\rm ib}$), and also the (iii) non-equilibrium ultrafast matter (UFM) state ($\sigma_{\rm uf}$) with the ion temperature $T_i$ less than the the electron temperature $T_e$. Aluminum, lithium and carbon are considered, being increasingly complex warm dense matter (WDM) systems, with carbon having transient covalent bonds. First-principles calculations, i.e., neutral-pseudoatom (NPA) calculations and density-functional theory (DFT) with molecular-dynamics (MD) simulations, are compared where possible with experimental data to characterize $\sigma_{\rm ic}, \sigma_{\rm ib}$ and $\sigma_{\rm uf}$. The NPA $\sigma_{\rm ib}$ are closest to the available experimental data when compared to results from DFT+MD, where simulations of about 64-125 atoms are typically used. The published conductivities for Li are reviewed and the value at a temperature of 4.5 eV is examined using supporting X-ray Thomson scattering calculations. A physical picture of the variations of $\sigma$ with temperature and density applicable to these materials is given. The insensitivity of $\sigma$ to $T_e$ below 10 eV for carbon, compared to Al and Li, is clarified.Comment: 10 figure

Two-temperature pair potentials and phonon spectra for simple metals in the warm dense matter regime

We develop ion-ion pair potentials for Al, Na and K for densities and temperatures relevant to the warm-dense-matter (WDM) regime. Furthermore, we emphasize non-equilibrium states where the ion temperature $T_i$ differs from the electron temperature $T_e$. This work focuses mainly on ultra-fast laser-metal interactions where the energy of the laser is almost exclusively transferred to the electron sub-system over femtosecond time scales. This results in a two-temperature system with $T_e>T_i$ and with the ions still at the initial room temperature $T_i=T_r$. First-principles calculations, such as density functional theory (DFT) or quantum Monte Carlo, are as yet not fully feasible for WDM conditions due to lack of finite-$T$ features, e.g. pseudopotentials, and extensive CPU time requirements. Simpler methods are needed to study these highly complex systems. We propose to use two-temperature pair potentials $U_{ii}(r, T_i,T_e)$ constructed from linear-response theory using the non-linear electron density $n(\mathbf{r})$ obtained from finite-$T$ DFT with a single ion immersed in the appropriate electron fluid. We compute equilibrium phonon spectra at $T_r$ which are found to be in very good agreement with experiments. This gives credibility to our non-equilibrium phonon dispersion relations which are important in determining thermophysical properties, stability, energy-relaxation mechanisms and transport coefficients.Comment: International Conf. on Strongly-Coupled Coulombo Systems (SCCS) 201