Efficient generation of data sets for one-shot statistical calibration of RF/mm-wave circuits

International audienc

High Power-Supply-Rejection (PSR) Low Drop-Out Regulator for Ultra Low Power Radiofrequency Functions

International audienc

High Power Supply Rejection Wideband Low-Dropout Regulator

International audienc

On the use of causal feature selection in the context of machine-learning indirect test

International audienc

On the use of causal feature selection in the context of machine-learning indirect test

International audienc

Yield Recovery of mm-Wave Power Amplifiers using Variable Decoupling Cells and One-Shot Statistical Calibration

International audienc

Fully Integrated Power Management Unit (PMU) Using NMOS Low Dropout Regulators

International audienc

Reliability Assessment of 4GSP/s Interleaved SAR ADC

International audienceFor high performance applications like satellite receivers, Interleaved Successive-Approximation-Register (ISAR) Analog to Digital Converter (ADC) are widely used because they have good tradeoff between high performance sampling rate, effective resolution, power and small area in GHz range. Very few work is reported about the impact of aging induced degradation in SAR ADC. After presenting the design content, experimental results of aging at 40°C and 125°C are shown. Degradation of static and dynamic performance parameters will be illustrated. Then, the analysis of reliability for all the critical sub-blocks of the ADC is discussed, i.e. switches in capacitor array, comparator and latch. In conclusion, the sub-block which is mainly responsible for performance degradation is the latch

A fully inin-situsitu reflectometer in G band in 55 nm SiGe BiCMOS

International audienceThis paper describes an in-situ reflectometer for one port VNA in 160 to 200 GHz band (G Band). The proposed system is fabricated in 55 nm SiGe BiCMOS technology from STMicroelectronics. Measured performances of system shown 110 mW of power DC consumption from a 1.2 V supply. A 180 GHz nMOS is measured as the device-under-test (DUT) after an in-situ calibration. The results obtained using this fully integrated VNA have been compared to a commercial VNA. A discrepancy of 0.3 dB is noted between the two systems on magnitude over a wide frequency range 172-192 GHz. Without calibration, the “raw” dynamics range of the system is limited by the directivity of the coupler which is 20 dB at 140-220 GHz. This dynamic will be improved after the calibration. The SiGe chip size is 3.3 mm$^2$ . To our best knowledge, the presented in-situ VNA have the first results compared to the recently published and are the first with an in-situ calibration integrated in SiGe or CMOS technologies