Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors with channel diameter scaled down to 10 nm and ability to reach a point subthreshold swing of 35 mV/decade at VDS = 0.05 V. Furthermore, the impact of drain, channel and source diameter scaling on the subthreshold swing and currents are studied. Impact of gate-overlap is more evident for devices with highly scaled source due to strong reduction of the current. Furthermore, small channel diameter makes these devices more susceptible to Random Telegraph Signal noise

The Right Evaluation Method - an Enabler for Process Improvement

This paper aims at describing the procedure where an alternative evaluation process was developed to support the improvement of both welding and weld quality evaluation. Welded structures are important when striving for reduced fuel consumption due to vehicle weight. Hence good control of the fabrication process is critical to keep welding performance on target, avoiding waste in terms of added weight and overproduction. The resulting distribution of weld weight has shown to be an important control parameter in the sense of keeping cost down. To identify the causes for deviations between actual and theoretical weld weight, information about the weld was needed. The currently used evaluation method showed not to be capable of giving the information needed. It was necessary to know the throat size as well as weld geometry. The current evaluation method introduced more variation due to the measurement than the actual fabrication process itself, leading to drift of process target and overproduction. To fulfil the need of information, that different functions within the company had, a PULL-approach was used. The information need, information presentation and sequence were outlined for each information receiver individually. An alternative measurement method was developed and named WIA – Weld Impression Analysis. The method consists of two parts; creating the replica and analysing the shape in an image analysis program. The method was tested to see if it was capable of delivering accurate and precise measurements, satisfying repeatability and reproducibility requirements for this particular situation. A thorough measurement system analysis was carried out. The measurement system assigned 98.98% of the total variation to part-to-part variation corresponding to long-term process variation. The variation that stems from taking the impressions and preparing them was as well investigated, also showing satisfying results. Finally it was investigated if the impressions reflect the true shape of the welds accurately. The results showed a tendency of slightly higher cross sectional areas in the range of 0-3 %. This however indicated that the accuracy of the measurement system was sufficient for its purpose. The PULL-approach generated a sufficient method which enabled the possibility to perform process improvement and gain large production cost savings

Vehicle self-localization using off-the-shelf sensors and a detailed map

In the research on autonomous vehicles, self-localization is an important problem to solve. In this paper we present a localization algorithm based on a map and a set of off-the-shelf sensors, with the purpose of evaluating this low-cost solution with respect to localization performance. The used test vehicle is equipped with a Global Positioning System receiver, a gyroscope, wheel speed sensors, a camera providing information about lane markings, and a radar detecting landmarks along the road. Evaluation shows that the localization result is within or close to the requirements for autonomous driving when lane markers and good radar landmarks are present. However, it also indicates that the solution is not robust enough to handle situations when one of these information sources is absent

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement

Increased absorption in InAsSb nanowire clusters through coupled optical modes

Nanowires can act as efficient light absorbers where waveguide modes are resonant to specific wavelengths. This resonant wavelength can easily be tuned by the nanowire dimensions, but the absorption of infrared radiation requires diameters of hundreds of nm, which is difficult to achieve using epitaxial growth. Here, we demonstrate that infrared absorption in InAsSb nanowires with the diameters of only 140 nm grown on Si substrates can be enhanced resonantly by placing them closely packed in clusters of different sizes. We find that coating the nanowires with a dielectric to optically connect them results in an efficient absorption diameter far exceeding the diameter of the constituent nanowires and that the cut-off wavelength is redshifted with an increasing cluster diameter. Numerical simulations are in agreement with the experimental results and demonstrate that if nanowires are positioned in clusters, a peak absorptance of 20% is possible at 5.6 μm with only 3% surface coverage. This absorptance is 200 times higher than for wires placed in an equidistant pattern. Our findings have direct implications for the design of efficient nanowire based photodetectors and solar cells

Coverage-dependent frequency for Li-atom vibrations on Cu(111)

Electron-energy-loss spectra recorded for monolayer amounts of Li adsorbed on Cu(111) show a loss peak associated with Li vibrations perpendicular to the substrate. The loss energy shifts from 38 meV at low coverage to 43 meV at 0.3 ML and remains constant for coverages between 0.3 and 0.5 ML. The loss intensity passes a maximum at a Li coverage of 0.15 ML and gradually decreases such that it is difficult to resolve a loss peak at coverages above 0.5 ML. The high loss energy indicates that the adatom resides on the surfaces rather than in substitutional sites. The frequency shift is much too large to be explained by dipole-dipole interactions. The above results are obtained with the evaporation source loaded with the natural Li isotope mixture (92.6% 7Li, 7.4% 6Li). Measurements with 6Li show that the increase of the vibration frequency with increasing coverage is not an isotope effect

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.

Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length L g of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage V T shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices

Journal Staff

Background: The polytene nuclei of the dipteran Chironomus tentans (Ch. tentans) with their Balbiani ring (BR) genes constitute an exceptional model system for studies of the expression of endogenous eukaryotic genes. Here, we report the first draft genome of Ch. tentans and characterize its gene expression machineries and genomic architecture of the BR genes. Results: The genome of Ch. tentans is approximately 200 Mb in size, and has a low GC content (31%) and a low repeat fraction (15%) compared to other Dipteran species. Phylogenetic inference revealed that Ch. tentans is a sister clade to mosquitoes, with a split 150-250 million years ago. To characterize the Ch. tentans gene expression machineries, we identified potential orthologus sequences to more than 600 Drosophila melanogaster (D. melanogaster) proteins involved in the expression of protein-coding genes. We report novel data on the organization of the BR gene loci, including a novel putative BR gene, and we present a model for the organization of chromatin bundles in the BR2 puff based on genic and intergenic in situ hybridizations. Conclusions: We show that the molecular machineries operating in gene expression are largely conserved between Ch. tentans and D. melanogaster, and we provide enhanced insight into the organization and expression of the BR genes. Our data strengthen the generality of the BR genes as a unique model system and provide essential background for in-depth studies of the biogenesis of messenger ribonucleoprotein complexes