Additional file 1: Figure S1. of Highly Enhanced H2 Sensing Performance of Few-Layer MoS2/SiO2/Si Heterojunctions by Surface Decoration of Pd Nanoparticles

AFM images of the Pd-decorated MoS2 films with the Pd thickness of (a) d Pd  = 1 nm, (b) d Pd  = 3 nm, (c) d Pd  = 5 nm, (d) d Pd  = 10 nm, (e) d Pd  = 15 nm and (f) d Pd  = 30 nm. Figure S2. UV spectrum of the few-layer MoS2 film. Figure S3. Sensing curves of (a) the few-layer MoS2/SiO2/Si heterojunction and (b) 5-nm Pd/SiO2/Si heterojunction. (DOCX 1723 kb

High-Performance Flexible Broadband Photothermoelectric Photodetectors Based on Tellurium Films

Mid- and far-infrared photodetectors that can operate at room temperature are essential for both civil and military applications. However, the widespread use of mid-to-far-infrared photonic technology faces challenges due to the need for low-temperature cooling of existing commercial semiconductors and the limited optical absorption efficiency of two-dimensional materials. We have utilized the photothermoelectric effect to fabricate a self-powered, broadband, and high-performance photodetector based on a one-dimensional tellurium nanorod array film. The device surpasses energy band gap limitations, functioning even at wavelengths up to approximately 10,600 nm. In particular, the detectivity of the device can reach 4.8 × 109 Jones at 4060 nm under room-temperature conditions, which is an order of magnitude higher than that of commercially available photodetectors. It demonstrates fast response and recovery times of 8.3 and 8.8 ms. Furthermore, the device demonstrates outstanding flexibility withstanding over 300 bending cycles and environmental stability. These results suggest a viable approach for designing and developing high-performance, room-temperature, wearable optoelectronic devices