China Type Asian Economic System

China initiates the "One Belt One Road" (OBOR) expansion strategy which is composed of the Silk Road Economic Belt (SREB) and 21st Century Maritime Silk Road (21st CMSR) expansion sub-strategies, seeking to integrate the 27 countries (perhaps 65 ones around the world) along the lines of OBOR Asian economic system with a demography of 4.4 billion, $US 21-trillion- dollar giant market into China type Asian economic system via the OBOR expansion strategy. On the one hand, China can exert itself in giving full play in the following advantageous areas such as the construction of infrastructure, high-speed railway, nuclear energy, industrial manufacturing, e-commerce, military manufacturing, etc.; on the other hand, China can also shift its surplus production capacity, capital, technology as well as labor-intensive industries into establishing China type Asian economic system so that China’s dream for interconnectivity, common prosperity and rise of Asia comes true finally

Modern Oriental Corporate CultureA Case Collection /

XXI, 118 p. 8 illus.online resource

Enhanced Metal–Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Vanadium dioxide (VO₂) is a strong-correlated metal–oxide with a sharp metal–insulator transition (MIT) for a range of applications. However, synthesizing epitaxial VO₂ films with desired properties has been a challenge because of the difficulty in controlling the oxygen stoichiometry of VO_<i>x</i>, where <i>x</i> can be in the range of 1 < <i>x</i> < 2.5 and V has multiple valence states. Herein, a unique moisture-assisted chemical solution approach has been developed to successfully manipulate the oxygen stoichiometry, to significantly broaden the growth window, and to significantly enhance the MIT performance of VO₂ films. The obvious broadening of the growth window of stoichiometric VO₂ thin films, from 4 to 36 °C, is ascribed to a self-adjusted process for oxygen partial pressure at different temperatures by introducing moisture. A resistance change as large as 4 orders of magnitude has been achieved in VO₂ thin films with a sharp transition width of less than 1 °C. The much enhanced MIT properties can be attributed to the higher and more uniform oxygen stoichiometry. This technique is not only scientifically interesting but also technologically important for fabricating wafer-scaled VO₂ films with uniform properties for practical device applications