New design tools for material and process selection

Recent developments in systematic methods for material and process selection for structural design are presented. They address the questions of multiple design elements selection, of multiple constraints and multiple objectives design, and of searching for applications. The methods presented here have been implemented in a software

Aides informatisées à la selection des matériaux et des procédés dans la conception des pièces de structure

GRENOBLE1-BU Sciences (384212103) / SudocLIMOGES-ENSCI (870852305) / SudocSudocFranceF

Materials and process selection from teaching to research and back: the Rhone Alpes experience

International audienceno abstrac

High temperature sealing of silicon oxide/oxide bonding interfaces

International audienceHigh temperature (>1000°C) annealing is necessary to completely close a bonding interface. Using interface synchrotron high energy X-ray reflectivity, we have investigated the sealing behavior of silicon thermal oxide/ silicon thermal oxide interfaces, with different surface roughnesses. Interface X-ray reflection is able to measure accurately the width and the depth of the electron density gap across a bonding interface with a sub-nanometer accuracy, whose product is a good marker of the interface closure.The uncomplete closure of the interface is the result of a balance between attractive and repulsive force between the two bonded solids. These two forces depend on the statistics of asperity and on the mechanical behavior of individual asperity [1]. For attraction, at high temperatures, a key factor is the gain of contact surface area which reduces the surface energy due to uncontacted zones. Repulsion is due to compression of contacting asperities. At high temperature, both elastic and plastic behavior can be expected, with some yield of the asperities compressed above the elastic limit.In the elastic solid regime, we have shown that equilibrium distance of rough silicon oxide to rough siliconoxide bonding can be predicted using standard adhesive contact models such as Johnson-Kendall Roberts (JKR) or Deryagin-Müller-Toporov (DMT) with Gaussian roughness statistics[2]. The equilibrium distance is dependent and sensitive to the Fuller Tabor adhesion parameter, θ=E σ3/2 R1/2 / 2γR where E is the Young modulus, σ the mean roughness, R the radius of the asperity, while 2γ is the adhesion energy at contact points. When θ>>1 , the equilibrium distance is large and the contact area is small (unclosed interface) . When θ<<1 the adhesion energy is strong and the system will have a strong tendency to seal.In the plastic regime, both repulsive and attractive curves share the same dependence with distance so that the system is expected to be unstable, between a weakly evolving unsealed interface and a fully sealed interface when the asperity pressure stress is above the elastic limit.The kinetics of the sealing can also be modeled in this case, monitoring the interfacial gap as a function of time (Figure). It is found that the sealing characteristic time scales directly with the silicon oxide viscosity (Figure insert). This dependence can be understood using the plastic asperity contact model, assuming the fluid part flows according to the Stokes equation around asperities

Fracture wake patterns in brittle solids

International audienceThe interactions of a moving crack with self-emitted acoustic waves are studied in ion-implanted circular plates of crystalline silicon, where complex reproducible surface patterns made of local roughness variations are observed. A simple geometrical model, considering the sole propagation of A0 Lamb waves inside the assembly, allows full prediction of all of these pattern shapes and their dependence on system parameters (crack velocity, elastic properties). Acoustic waves propagating along and behind the crackfront are shown to play a central role in fracture-pattern formation. When the crack front is curved, surface patterns originate independently of any edge reflection or frequency preselection from acoustic waves propagating along and behind the crack. As in case of Kelvin wake patterns, fracture patterns emerge from geometrically induced coherence

Experimental study of post-crack vibrations in dynamic fracture

International audienceVibrations induced by crack propagation in a strip of bonded silicon wafers are studied. A new optical setup enables the fast recording of crack-originated acoustic waves, emitted both ahead and behind the crack front, in bonded and separated wafers, respectively. Three types of crack-induced vibrations are identified, corresponding to different excitations and responses of the system: (1) “pneumatic” vibrations involving inertia and gas expansion/compression, (2) standard flexural waves involving inertia and bending rigidity, and (3) post-crack vibrations involving inertia, bending rigidity, and coupling to gas pressure. We show that a standard “beam on elastic foundation” model can explain these latter vibrations that occur along crack edges and is consistent with the observed frequencies

Interface water diffusion in silicon direct bonding

International audienceThe kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray reflectivity is able to monitor the interface density changes associated with the water front progression. The water intake is also revealed through the defect creation upon annealing, creating a rim-like pattern whose extent also gives the water diffusion law. At room temperature, the kinetics observed by either technique are consistent with the Lucas-Washburn law for diffusion through a gap width smaller than 1 nm, excluding any significant no-slip layer thickness. Published by AIP Publishing

Development of microcracks in hydrogen-implanted silicon substrates

International audienceThe development of microcracks in hydrogen-implanted silicon has been studied up to the final split using optical microscopy and mass spectroscopy. It is shown that the amount of gas released when splitting the material is proportional to the surface area of microcracks. This observation is interpreted as a signature of a vertical collection of the available gas. The development of microcracks is modeled taking into account both diffusion and mechanical crack propagation. The model reproduces many experimental observations such as the dependence of split time upon temperature and implanted dose

(Invited) Water Transport Along Si/Si Direct Wafer Bonding Interfaces

International audienceThe transport of water in a highly confined gap made by the directbonding of low roughness silicon hydrophilic wafers is studied.We derive the equation for the transport of water from chemicalpotential gradients, using Stokes and conservation equations. Thetransport equation is found to be a Porous Medium Equation withexponent 2. A solution for this equation with stepwise boundaryconditions is given. The model is tested against different initialconditions for inward and outward flow, and different temperaturesand humidity levels