Interaction between U/UO2 bilayers and hydrogen studied by in-situ X-ray diffraction

This paper reports experiments investigating the reaction of H$_{2}$ with uranium metal-oxide bilayers. The bilayers consist of $\leq$ 100 nm of epitaxial $\alpha$-U (grown on a Nb buffer deposited on sapphire) with a UO$_{2}$ overlayer of thicknesses of between 20 and 80 nm. The oxides were made either by depositing via reactive magnetron sputtering, or allowing the uranium metal to oxidise in air at room temperature. The bilayers were exposed to hydrogen, with sample temperatures between 80 and 200 C, and monitored via in-situ x-ray diffraction and complimentary experiments conducted using Scanning Transmission Electron Microscopy - Electron Energy Loss Spectroscopy (STEM-EELS). Small partial pressures of H$_{2}$ caused rapid consumption of the U metal and lead to changes in the intensity and position of the diffraction peaks from both the UO$_{2}$ overlayers and the U metal. There is an orientational dependence in the rate of U consumption. From changes in the lattice parameter we deduce that hydrogen enters both the oxide and metal layers, contracting the oxide and expanding the metal. The air-grown oxide overlayers appear to hinder the H$_{2}$-reaction up to a threshold dose, but then on heating from 80 to 140 C the consumption is more rapid than for the as-deposited overlayers. STEM-EELS establishes that the U-hydride layer lies at the oxide-metal interface, and that the initial formation is at defects or grain boundaries, and involves the formation of amorphous and/or nanocrystalline UH$_{3}$. This explains why no diffraction peaks from UH$_{3}$ are observed. {\textcopyright British Crown Owned Copyright 2017/AWE}Comment: Submitted for peer revie

Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1 – xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V – 1 s – 1 at a carrier density of 3.3 × 1011 cm – 2 for x = 0.2 and 300 cm2 V – 1 s – 1 at 6.3 × 1011 cm – 2 for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control

Unexpected phase locking of magnetic fluctuations in the multi-k magnet USb

The spin waves in the multi-k antiferromagnet USb soften and become quasielastic well below the antiferromagnetic ordering temperature TN. This occurs without a magnetic or structural transition. It has been suggested that this change is in fact due to dephasing of the different multi-k components: a switch from 3-k to 1-k behavior. In this work, we use inelastic neutron scattering with tridirectional polarization analysis to probe the quasielastic magnetic excitations and reveal that the 3-k structure does not dephase. More surprisingly, the paramagnetic correlations also maintain the same clear phase correlations well above TN (up to at least 1.4TN)

Magnetic Excitations in NpCoGa5

We report the results of inelastic neutron scattering experiments on NpCoGa$_{5}$, an isostructural analogue of the PuCoGa$_{5}$ superconductor. Two energy scales characterize the magnetic response in the antiferromagnetic phase. One is related to a non-dispersive excitation between two crystal field levels. The other at lower energies corresponds to dispersive fluctuations emanating from the magnetic zone center. The fluctuations persist in the paramagnetic phase also, although weaker in intensity. This supports the possibility that magnetic fluctuations are present in PuCoGa$_{5}$, where unconventional d-wave superconductivity is achieved in the absence of magnetic order.Comment: 4 pages, 5 figure

Multi-k magnetic structures in USb_{0.9}Te_{0.1} and UAs_{0.8}Se_{0.2} observed via resonant x-ray scattering at the U M4 edge

Experiments with resonant photons at the U M4 edge have been performed on a sample of USb_{0.9}Te_{0.1}, which has an incommensurate magnetic structure with k = 0.596(2) reciprocal lattice units. The reflections of the form , as observed previously in a commensurate k = 1/2 system [N. Bernhoeft et al., Phys. Rev. B 69 174415 (2004)] are observed, removing any doubt that these occur because of multiple scattering or high-order contamination of the incident photon beam. They are clearly connected with the presence of a 3k configuration. Measurements of the reflections from the sample UAs_{0.8}Se_{0.2} in a magnetic field show that the transition at T* ~ 50 K is between a low-temperature 2k and high-temperature 3k state and that this transition is sensitive to an applied magnetic field. These experiments stress the need for quantitative theory to explain the intensities of these reflections.Comment: submitted to Phys. Rev.

The malleability of uranium: manipulating the charge-density wave in epitaxial films

We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the strains propagated along the a-axis of the uranium layers are of opposite sign. At low temperatures these changes in epitaxy result in dramatic modifications to the behavior of the charge-density wave in uranium. The differences are explained with the current theory for the electron-phonon coupling in the uranium lattice. Our results emphasize the intriguing possibilities of producing epitaxial films of elements that have complex structures like the light actinides uranium to plutonium.Comment: 6 pages, 6 figure