9,574 research outputs found

    Impact of Electron Collision Mixing on the delay times of an electron beam excited Atomic Xenon laser

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    The atomic xenon (5d¿6p) infrared laser has been experimentally and theoretically investigated using a short-pulse (30-ns), high-power (1-10-MW/cm3) coaxial electron beam excitation source. In most cases, laser oscillation is not observed during the e-beam current pulse. Laser pulses of hundreds of nanoseconds duration are subsequently obtained, however, with oscillation beginning 60-800 ns after the current pulse terminates. Results from a computer model for the xenon laser reproduce the experimental values and show that oscillation begins when the fractional electron density decays below a critical value of ≈0.2-0.8×10 6. These results lend credence to the proposal that electron collision mixing of the laser levels limits the maximum value of specific power deposition that can be used to excite the atomic xenon laser efficiently on a quasi-CW basi

    Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

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    Various approaches can be used to selectively control the amount of intermixing in III-Vquantum well and quantum dotstructures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dotstructures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiOxNyfilms. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.This work has been made possible with access to the ACT Node of the Australian National Fabrication Facility and through the financial support of the Australian Research Council

    Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

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    The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO₂ layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.One of the authors (H.H.T.) acknowledges a fellowship awarded to him by the Australian Research Council

    GeV Scale Asymmetric Dark Matter from Mirror Universe: Direct Detection and LHC Signatures

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    Mirror universe is a fundamental way to restore parity symmetry in weak interactions. It naturally provides the lightest mirror nucleon as a unique GeV-scale asymmetric dark matter particle candidate. We conjecture that the mirror parity is respected by the fundamental interaction Lagrangian, and its possible soft breaking arises only from non-interaction terms in the gauge-singlet sector. We realize the spontaneous mirror parity violation by minimizing the vacuum Higgs potential, and derive the corresponding Higgs spectrum. We demonstrate that the common origin of CP violation in the visible and mirror neutrino seesaws can generate the right amount of matter and mirror dark matter via leptogenesis. We analyze the direct detections of GeV-scale mirror dark matter by TEXONO and CDEX experiments. We further study the predicted distinctive Higgs signatures at the LHC.Comment: 16pp. Plenary talk presented by HJH at the International Symposium on Cosmology and Particle Astrophysics (CosPA2011). To appear in the conference proceedings of IJMP. Minor refinement

    The prevalence of autism spectrum disorders in China: A comprehensive meta-analysis

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    There are conflicting prevalence estimates of autism spectrum disorders (ASDs) in mainland China (China thereafter). This study is a comprehensive meta-analysis of the pooled prevalence of ASDs in the general population in China. Study investigators independently conducted a systematic literature search of the following databases: PubMed, EMBASE, PsycINFO, China National Knowledge Infrastructure, Chinese biomedical literature service system, and Wan Fang. Studies reporting prevalence of ASDs and autism in Chinese population were identified and analysed using the Comprehensive Meta-Analysis program with the random effects model. Forty-four studies were included in the meta-analysis comprising 2,337,321 subjects of whom 46.66 % were females. The mean age of subjects ranged from 1.6 to 8 years. Based on diagnostic criteria the pooled prevalence of ASDs was 39.23 per 10,000 (95% CI: 28.44-50.03 per 10,000, I2=89.2%); specifically, the prevalence of autism was 10.18 per 10,000 (95% CI: 8.46-11.89 per 10,000, I2=92.5%). Subgroup analyses revealed significant difference in the prevalence of ASDs between genders (72.77 per 10,000 in males vs. 16.45 per 10,000 in females). In conclusion, the prevalence of ASDs and autism in China was found generally lower than those reported in other countries. Further studies are needed to clarify the variation in prevalence
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