Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode

Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction. After photoexcitation of silicon, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in spectral shifts in the Ni M2,3 XUV edge that are characteristic of holes and the absence of holes initially in TiO2. Meanwhile, the electrons are observed to remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously

A soft X-ray spectroscopic perspective of electron localization and transport in tungsten doped bismuth vanadate single crystals

Polarization dependent V L-edge XAS spectra showing anisotropy in the electronic band structure of a W:BiVO4 single crystal.</p

Adding 6 months of androgen deprivation therapy to postoperative radiotherapy for prostate cancer: a comparison of short-course versus no androgen deprivation therapy in the RADICALS-HD randomised controlled trial

Background Previous evidence indicates that adjuvant, short-course androgen deprivation therapy (ADT) improves metastasis-free survival when given with primary radiotherapy for intermediate-risk and high-risk localised prostate cancer. However, the value of ADT with postoperative radiotherapy after radical prostatectomy is unclear. Methods RADICALS-HD was an international randomised controlled trial to test the efficacy of ADT used in combination with postoperative radiotherapy for prostate cancer. Key eligibility criteria were indication for radiotherapy after radical prostatectomy for prostate cancer, prostate-specific antigen less than 5 ng/mL, absence of metastatic disease, and written consent. Participants were randomly assigned (1:1) to radiotherapy alone (no ADT) or radiotherapy with 6 months of ADT (short-course ADT), using monthly subcutaneous gonadotropin-releasing hormone analogue injections, daily oral bicalutamide monotherapy 150 mg, or monthly subcutaneous degarelix. Randomisation was done centrally through minimisation with a random element, stratified by Gleason score, positive margins, radiotherapy timing, planned radiotherapy schedule, and planned type of ADT, in a computerised system. The allocated treatment was not masked. The primary outcome measure was metastasis-free survival, defined as distant metastasis arising from prostate cancer or death from any cause. Standard survival analysis methods were used, accounting for randomisation stratification factors. The trial had 80% power with two-sided α of 5% to detect an absolute increase in 10-year metastasis-free survival from 80% to 86% (hazard ratio [HR] 0·67). Analyses followed the intention-to-treat principle. The trial is registered with the ISRCTN registry, ISRCTN40814031, and ClinicalTrials.gov, NCT00541047. Findings Between Nov 22, 2007, and June 29, 2015, 1480 patients (median age 66 years [IQR 61–69]) were randomly assigned to receive no ADT (n=737) or short-course ADT (n=743) in addition to postoperative radiotherapy at 121 centres in Canada, Denmark, Ireland, and the UK. With a median follow-up of 9·0 years (IQR 7·1–10·1), metastasis-free survival events were reported for 268 participants (142 in the no ADT group and 126 in the short-course ADT group; HR 0·886 [95% CI 0·688–1·140], p=0·35). 10-year metastasis-free survival was 79·2% (95% CI 75·4–82·5) in the no ADT group and 80·4% (76·6–83·6) in the short-course ADT group. Toxicity of grade 3 or higher was reported for 121 (17%) of 737 participants in the no ADT group and 100 (14%) of 743 in the short-course ADT group (p=0·15), with no treatment-related deaths. Interpretation Metastatic disease is uncommon following postoperative bed radiotherapy after radical prostatectomy. Adding 6 months of ADT to this radiotherapy did not improve metastasis-free survival compared with no ADT. These findings do not support the use of short-course ADT with postoperative radiotherapy in this patient population

Duration of androgen deprivation therapy with postoperative radiotherapy for prostate cancer: a comparison of long-course versus short-course androgen deprivation therapy in the RADICALS-HD randomised trial

Background Previous evidence supports androgen deprivation therapy (ADT) with primary radiotherapy as initial treatment for intermediate-risk and high-risk localised prostate cancer. However, the use and optimal duration of ADT with postoperative radiotherapy after radical prostatectomy remains uncertain. Methods RADICALS-HD was a randomised controlled trial of ADT duration within the RADICALS protocol. Here, we report on the comparison of short-course versus long-course ADT. Key eligibility criteria were indication for radiotherapy after previous radical prostatectomy for prostate cancer, prostate-specific antigen less than 5 ng/mL, absence of metastatic disease, and written consent. Participants were randomly assigned (1:1) to add 6 months of ADT (short-course ADT) or 24 months of ADT (long-course ADT) to radiotherapy, using subcutaneous gonadotrophin-releasing hormone analogue (monthly in the short-course ADT group and 3-monthly in the long-course ADT group), daily oral bicalutamide monotherapy 150 mg, or monthly subcutaneous degarelix. Randomisation was done centrally through minimisation with a random element, stratified by Gleason score, positive margins, radiotherapy timing, planned radiotherapy schedule, and planned type of ADT, in a computerised system. The allocated treatment was not masked. The primary outcome measure was metastasis-free survival, defined as metastasis arising from prostate cancer or death from any cause. The comparison had more than 80% power with two-sided α of 5% to detect an absolute increase in 10-year metastasis-free survival from 75% to 81% (hazard ratio [HR] 0·72). Standard time-to-event analyses were used. Analyses followed intention-to-treat principle. The trial is registered with the ISRCTN registry, ISRCTN40814031, and ClinicalTrials.gov , NCT00541047 . Findings Between Jan 30, 2008, and July 7, 2015, 1523 patients (median age 65 years, IQR 60–69) were randomly assigned to receive short-course ADT (n=761) or long-course ADT (n=762) in addition to postoperative radiotherapy at 138 centres in Canada, Denmark, Ireland, and the UK. With a median follow-up of 8·9 years (7·0–10·0), 313 metastasis-free survival events were reported overall (174 in the short-course ADT group and 139 in the long-course ADT group; HR 0·773 [95% CI 0·612–0·975]; p=0·029). 10-year metastasis-free survival was 71·9% (95% CI 67·6–75·7) in the short-course ADT group and 78·1% (74·2–81·5) in the long-course ADT group. Toxicity of grade 3 or higher was reported for 105 (14%) of 753 participants in the short-course ADT group and 142 (19%) of 757 participants in the long-course ADT group (p=0·025), with no treatment-related deaths. Interpretation Compared with adding 6 months of ADT, adding 24 months of ADT improved metastasis-free survival in people receiving postoperative radiotherapy. For individuals who can accept the additional duration of adverse effects, long-course ADT should be offered with postoperative radiotherapy. Funding Cancer Research UK, UK Research and Innovation (formerly Medical Research Council), and Canadian Cancer Society

Ultrafast time-resolved extreme ultraviolet (XUV) photoelectron spectroscopy of hole transfer in a Zn/n-GaP Schottky junction.

The addition of a metal overlayer to a semiconductor photocatalyst is a frequently used synthetic route to passivate the surface and, via the formation of a Schottky barrier, to enhance catalytic activity of the photocatalyst material. While it is known that Schottky junctions decrease recombination by charge separation, measurements of the depletion region dynamics have remained elusive. Here, we use ultrafast pump-probe transient photoelectron spectroscopy to measure material-specific dynamics of the Zn/n-GaP(100) system. Through photoemission measurements the Schottky barrier height is determined to be 2.1 ± 0.1 eV at 10 monolayers of total Zn deposition. Transient photoemission measurements utilizing a 400 nm pump pulse show that, after excitation, holes are transferred from n-GaP(100) to the Zn overlayer within a few ps, as evidenced by shifts of the Zn 3d and Ga 3d core levels to higher binding energies. Within the timescale of the experiment (130 ps) no carrier recombination is observed in the junction. Furthermore, a long-lived surface photovoltage signal is observed at times &gt;1 ms after photoexcitation. This work further exemplifies the potential of transient extreme ultraviolet photoelectron spectroscopy as a material-specific technique for the study of heterojunctions

Ultrafast time-resolved extreme ultraviolet (XUV) photoelectron spectroscopy of hole transfer in a Zn/n-GaP Schottky junction.

The addition of a metal overlayer to a semiconductor photocatalyst is a frequently used synthetic route to passivate the surface and, via the formation of a Schottky barrier, to enhance catalytic activity of the photocatalyst material. While it is known that Schottky junctions decrease recombination by charge separation, measurements of the depletion region dynamics have remained elusive. Here, we use ultrafast pump-probe transient photoelectron spectroscopy to measure material-specific dynamics of the Zn/n-GaP(100) system. Through photoemission measurements the Schottky barrier height is determined to be 2.1 ± 0.1 eV at 10 monolayers of total Zn deposition. Transient photoemission measurements utilizing a 400 nm pump pulse show that, after excitation, holes are transferred from n-GaP(100) to the Zn overlayer within a few ps, as evidenced by shifts of the Zn 3d and Ga 3d core levels to higher binding energies. Within the timescale of the experiment (130 ps) no carrier recombination is observed in the junction. Furthermore, a long-lived surface photovoltage signal is observed at times &gt;1 ms after photoexcitation. This work further exemplifies the potential of transient extreme ultraviolet photoelectron spectroscopy as a material-specific technique for the study of heterojunctions

Ultrafast time-resolved extreme ultraviolet (XUV) photoelectron spectroscopy of hole transfer in a Zn/n-GaP Schottky junction

The addition of a metal overlayer to a semiconductor photocatalyst is a frequently used synthetic route to passivate the surface and, via the formation of a Schottky barrier, to enhance catalytic activity of the photocatalyst material. While it is known that Schottky junctions decrease recombination by charge separation, measurements of the depletion region dynamics have remained elusive. Here, we use ultrafast pump-probe transient photoelectron spectroscopy to measure material-specific dynamics of the Zn/n-GaP(100) system. Through photoemission measurements the Schottky barrier height is determined to be 2.1 ± 0.1 eV at 10 monolayers of total Zn deposition. Transient photoemission measurements utilizing a 400 nm pump pulse show that, after excitation, holes are transferred from n-GaP(100) to the Zn overlayer within a few ps, as evidenced by shifts of the Zn 3d and Ga 3d core levels to higher binding energies. Within the timescale of the experiment (130 ps) no carrier recombination is observed in the junction. Furthermore, a long-lived surface photovoltage signal is observed at times &gt;1 ms after photoexcitation. This work further exemplifies the potential of transient extreme ultraviolet photoelectron spectroscopy as a material-specific technique for the study of heterojunctions

Electronic Structure And Ultrafast Charge Carrier Dynamics Of Zn Clusters Supported On A P-Si(100) Surface

Femtosecond XUV photoemission spectroscopy is employed to monitor the non-metal to metal transition of Zn clusters grown on p-Si(100) as well as the ultrafast charge migration, trapping, and recombination at the surface

Measuring the Surface Photovoltage of a Schottky Barrier under Intense Light Conditions: Zn/p-Si(100) by Laser Time-Resolved Extreme Ultraviolet Photoelectron Spectroscopy

A metal–semiconductor heterojunction is investigated by Auger and photoelectron spectroscopy to characterize the structural and electronic properties of the metallic film and to obtain the time-resolved electronic response induced by femtosecond laser excitation of the semiconductor material. The 3.5 monolayer (ML) Zn films deposited on p-type Si(100) at liquid nitrogen temperature grows in a layer-by-layer fashion. Electronic structure measurements by extreme ultraviolet (XUV) photoelectron spectroscopy indicate that the films are metallic in nature, creating a Schottky barrier at the 3.5 ML Zn/p-Si(100) interface. Utilizing a 35 fs, 800 nm pump pulse at a pump intensity of (2.5–6) × 10^9 W/cm^2 to excite the Si and a time-delayed extreme ultraviolet pulse to probe the Zn, we observed large transient surface photovoltage shifts of 0.3–2.2 eV at carrier densities of (1.5–4.5) × 10^(20) cm^(–3). Three shifts are determined the Zn 3d core level, the photoemission onset, and the metallic Fermi level. The photovoltages increase with laser excitation intensity, and the Zn 3d core level exhibits the largest binding energy shifts due to pronounced screening of the core level. The large observed shifts are rationalized on the basis of the energetics of band flattening and carrier accumulation in the metallic layer of the Zn/p-Si(100) heterojunction at high carrier densities. The observed carrier recombination dynamics are biexponential in character, with similar time constants for both the Zn 3d and photoemission onset binding energy shifts. The Zn 3d core level shifts are also found to be sensitive to the electron temperature. These results show that core-level photoemission can be used to monitor valence electron dynamics, allowing separation of charge dynamics in heterojunctions and solids composed of multiple elements

Measuring The Surface Photovoltage Of A Schottky Barrier Under Intense Light Conditions: Zn/P-Si(100) By Laser Time-Resolved Extreme Ultraviolet Photoelectron Spectroscopy

A metal-semiconductor heterojunction is investigated by Auger and photoelectron spectroscopy to characterize the structural and electronic properties of the metallic film and to obtain the time-resolved electronic response induced by femtosecond laser excitation of the semiconductor material. The 3.5 monolayer (ML) Zn films deposited on p-type Si(100) at liquid nitrogen temperature grows in a layer-by-layer fashion. Electronic structure measurements by extreme ultraviolet (XUV) photoelectron spectroscopy indicate that the films are metallic in nature, creating a Schottky barrier at the 3.5 ML Zn/p-Si(100) interface. Utilizing a 35 fs, 800 nm pump pulse at a pump intensity of (2.5-6) × 109 W/cm2 to excite the Si and a time-delayed extreme ultraviolet pulse to probe the Zn, we observed large transient surface photovoltage shifts of 0.3-2.2 eV at carrier densities of (1.5-4.5) × 1020 cm-3. Three shifts are determined the Zn 3d core level, the photoemission onset, and the metallic Fermi level. The photovoltages increase with laser excitation intensity, and the Zn 3d core level exhibits the largest binding energy shifts due to pronounced screening of the core level. The large observed shifts are rationalized on the basis of the energetics of band flattening and carrier accumulation in the metallic layer of the Zn/p-Si(100) heterojunction at high carrier densities. The observed carrier recombination dynamics are biexponential in character, with similar time constants for both the Zn 3d and photoemission onset binding energy shifts. The Zn 3d core level shifts are also found to be sensitive to the electron temperature. These results show that core-level photoemission can be used to monitor valence electron dynamics, allowing separation of charge dynamics in heterojunctions and solids composed of multiple elements