93 research outputs found

    Changes in Nitric Oxide Level and Thickness Index of Synovial Fluid in Osteoarthritis Patients following Intraarticular Injection of Sodium Hyaluronate

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    Purpose: To monitor the changes in nitric oxide levels and synovium thickness index in synovial fluid following intra-articular injection of sodium hyaluronate.Methods: One hundred patients diagnosed with osteoarthritis of the knee from April 2014 to January 2015 in The Third Hospital of Jinan, Jinan, Shandong, China were selected and categorized into three phases; namely, mild, moderate and severe. Patients received a 20 mL sodium hyaluronate injection into the articular cavity of the knee once per week for 15 weeks, with continuous observation. The Visual Analogue Scale (VAS) and Western Ontario and McMaster University Osteoarthritis Index (WOMAC) scores were recorded after five weeks. A total of 56 patients (78 knees) remaining in serious condition after 5 weeks were divided into mild, moderate, and severe groups and treated with sodium hyaluronate once a week. Internationally reorganized VAS and WOMAC scores were adopted as clinical observation indices to indicate the curative effect of sodium hyaluronate among the 56 patients after 15 weeks of treatment. The conditions of the patients in the two phases were compared.Results: After 5 weeks of treatment, treatment effective rate in the mild, moderate and severe groups was 72.92, 66.10 and 28.57 %, respectively, with an overall effective rate of 78 %. After 15 weeks of treatment, treatment effective rate in mild, moderate, and severe groups was 96.77, 95.45 and 66.67 %, respectively, with an overall effective rate of 67.95 %.Conclusions: Clinically curative effect of sodium hyaluronate is significant for mild and moderate phase patients after intra-articular injection of sodium hyaluronate, while the effect is insignificant in severe patients. Thus, sodium hyaluronate can effectively improve nitric oxide levels in synovial fluid, reduce synovium thickness, enhances articular cavity lubrication and effectively alleviates disease severity.Keywords: Osteoarthritis, Knee, Intra-articular injection, Sodium hyaluronate, Nitric oxide, Synovium thickness, WOMA

    Thermoelectric performance of P-type Bi85Sb15-xSnx alloys prepared by mechanical alloying and pressureless sintering at low temperatures

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    AbstractIn the present study, the Bi85Sb15-xSnx (x=0, 1, 2, 3) thermoelectric materials have been fabricated through mechanical alloying followed by pressureless sintering. The phase composition and the microstructure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. Electrical conductivity, Seebeck coefficient and thermal conductivity were measured in the temperature range of 77∼300K. The electrical conductivity was characterized by using four-probe method. The Seebeck coefficient was determined from measured temperature and electric potential difference between the two ends of the bar-shape specimen. The thermal conductivity was measured by means of a heat and sink steady state method. Then the power factor and ZT were calculated according to the measurement values. The results showed that the Sn-doped samples changed from n-type to p-type at low temperature. A maximum power factor of 1.67 ×10-3W/mK2 and a minimum thermal conductivity of 1.8W/mK were obtained. The optimum ZT value of 0.15 was obtained at 300K

    Optimization of thermoelectric efficiency in SnTe: the case for the light band

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    p-Type PbTe is an outstanding high temperature thermoelectric material with zT of 2 at high temperatures due to its complex band structure which leads to high valley degeneracy. Lead-free SnTe has a similar electronic band structure, which suggests that it may also be a good thermoelectric material. However, stoichiometric SnTe is a strongly p-type semiconductor with a carrier concentration of about 1 × 10^(20) cm^(−3), which corresponds to a minimum Seebeck coefficient and zT. While in the case of p-PbTe (and n-type La3Te4) one would normally achieve higher zT by using high carrier density in order to populate the secondary band with higher valley degeneracy, SnTe behaves differently. It has a very light, upper valence band which is shown in this work to provide higher zT than doping towards the heavier second band. Therefore, decreasing the hole concentration to maximize the performance of the light band results in higher zT than doping into the high degeneracy heavy band. Here we tune the electrical transport properties of SnTe by decreasing the carrier concentration with iodine doping, and increasing the carrier concentration with Gd doping or by making the samples Te deficient. A peak zT value of 0.6 at 700 K was obtained for SnTe0.985I0.015 which optimizes the light, upper valence band, which is about 50% higher than the other peak zT value of 0.4 for Gd_zSn_(1−zT)e and SnTe_(1+y) which utilize the high valley degeneracy secondary valence band

    Thermoelectric performance of co-doped SnTe with resonant levels

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    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n_H) and extrinsic dopant concentration (N_I, N_(Ag)) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n_H. Upon substituting extrinsic dopants beyond a certain amount, the nH changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials

    EA-BEV: Edge-aware Bird' s-Eye-View Projector for 3D Object Detection

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    In recent years, great progress has been made in the Lift-Splat-Shot-based (LSS-based) 3D object detection method, which converts features of 2D camera view and 3D lidar view to Bird's-Eye-View (BEV) for feature fusion. However, inaccurate depth estimation (e.g. the 'depth jump' problem) is an obstacle to develop LSS-based methods. To alleviate the 'depth jump' problem, we proposed Edge-Aware Bird's-Eye-View (EA-BEV) projector. By coupling proposed edge-aware depth fusion module and depth estimate module, the proposed EA-BEV projector solves the problem and enforces refined supervision on depth. Besides, we propose sparse depth supervision and gradient edge depth supervision, for constraining learning on global depth and local marginal depth information. Our EA-BEV projector is a plug-and-play module for any LSS-based 3D object detection models, and effectively improves the baseline performance. We demonstrate the effectiveness on the nuScenes benchmark. On the nuScenes 3D object detection validation dataset, our proposed EA-BEV projector can boost several state-of-the-art LLS-based baselines on nuScenes 3D object detection benchmark and nuScenes BEV map segmentation benchmark with negligible increment of inference time

    CRL4Wdr70 regulates H2B monoubiquitination and facilitates Exo1-dependent resection

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    Double strand breaks repaired by homologous recombination (HR) are first resected to form single stranded DNA which binds replication protein A (RPA). RPA attracts mediators which load the Rad51 filament to promote strand invasion, the defining feature of HR. How the resection machinery navigates nucleosome-packaged DNA is poorly understood. Using Schizosaccharomyces pombe we report that a conserved DDB1-CUL4-associated factor (DCAF), Wdr70, is recruited to DSBs as part of the Cullin4-DDB1 ubiquitin ligase (CRL4Wdr70) and stimulates distal H2B lysine 119 monoubiquitination(uH2B). Wdr70 deletion, or uH2B loss, results in increased loading of the checkpoint adaptor and resection inhibitor Crb253BP1, decreased Exo1 association and delayed resection. Wdr70 is dispensable for resection upon Crb253BP1 loss, or when the Set9 methyltransferase that creates docking sites for Crb2 is deleted. Finally we establish that this histone regulatory cascade similarly controls DSB resection in human cells

    Thermoelectric performance of co-doped SnTe with resonant levels

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    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n_H) and extrinsic dopant concentration (N_I, N_(Ag)) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n_H. Upon substituting extrinsic dopants beyond a certain amount, the nH changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials
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