Controlling magnetization reversal in Co/Pt nanostructures with perpendicular anisotropy

We demonstrate a simple method to tailor the magnetization reversal mechanisms of Co/Pt multilayers by depositing them onto large area nanoporous anodized alumina (AAO) with various aspect ratios, A = pore depth/diameter. Magnetization reversal of composite (Co/Pt)/AAO films with large A is governed by strong domain-wall pinning which gradually transforms into a rotation-dominated reversal for samples with smaller A, as investigated by a first-order reversal curve method in conjunction with analysis of the angular dependent switching fields. The change of the magnetization reversal mode is attributed to topographical changes induced by the aspect ratio of the AAO templates.Comment: 12 pages, 3 figure

Arsenic Exposure and Methylation Efficiency in Relation to Oxidative Stress in Semiconductor Workers

This study examined associations between oxidative stress and arsenic (As) exposure and methylation efficiency in semiconductor workers. An As-exposed group (n = 427) and a control group (n = 91) were included. The As-exposure group (n = 427) included 149 maintenance staff members and 278 production staff members representing high As exposure and low As exposure, respectively. The control group included 91 administrative staff members with no or minimal As exposure. An occupational exposure assessment was conducted to assess personal As exposure by measuring As concentrations in urine, hair, and fingernails of the subjects. Urinary As(III), As(V), monomethylarsonic (MMA), and dimethylarsinic acid (DMA) were quantified to assess an internal dose of inorganic As. Urinary 8-hydroxy-2’-deoxyguanosine (8-OHdG) and malondialdehyde (MDA) were measured to asses oxidative DNA damage and lipid peroxidation, respectively. As concentrations in urine, hair, and fingernails significantly increased (p \u3c 0.05) in the As-exposed group in comparison to the control group. Geometric mean urinary concentrations of As, 8-OHdG, and MDA in the As-exposed group significantly exceeded those in the control group. As exposure to As-exposed workers had increased concentrations of 8-OHdG in contrast to those in control subjects. Moreover, urinary 8-OHdG concentrations in the semiconductor workers were positively correlated with urinary total As metabolite (As(III) + As(V) + MMA + DMA) concentrations. Furthermore, urinary excretion of 8-OHdG concentrations in As-exposed workers were positively associated with urinary excretion of MMA concentrations and primary methylation index values (the ration of MMA/inorganic As). However, fingernail and hair samples did not perform as well as urinary samples to measure oxidative stress induced by As exposure. 8-OHdG could serve as a more reliable biomarker for assessing As methylation than MDA did. Occupational exposure to inorganic As was associated with increased oxidative stress among semiconductor workers

Neel tensor torque at the ferromagnet/antiferromagnet interface

Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin configurations, is achieved recently, it remains a daunting challenge to characterize and to manipulate polycrystalline AFMs. Utilizing statistical analysis in data science, we demonstrate that polycrystalline AFMs can be described using a real, symmetric, positive semi-definite, rank-two tensor, which we term the Neel tensor. This tensor introduces a unique spin torque, diverging from the conventional field-like and Slonczewski torques in spintronics devices. Remarkably, Neel tensors can be trained to retain a specific orientation, functioning as a form of working memory. This attribute enables zero-field spin-orbit-torque switching in trilayer devices featuring a heavy-metal/ferromagnet/AFM structure and is also consistent with the X-ray magnetic linear dichroism measurements. Our findings uncover hidden statistical patterns in polycrystalline AFMs and establishes the presence of Neel tensor torque, highlighting its potential to drive future spintronics innovations.Comment: main text 18 pages, supplementary information 10 page