43 research outputs found
Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers
Get PDFComment on the paper entitled 'Characterization of the interface states at Al-GaAs Schottky barriers with a thin interface layer'
No full textStudy of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments
No full textOn the role of defects in some compound semiconductor (GaAs, InP, CdTe) Schottky Barriers
No full textOn interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers
No full textInfluence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.
No full textElectrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.
No full textElectron trapping in the oxide layer of MIS-type Al-, Au-, Ag- and Sn-n-type GaAs Schottky barriers
No full textThe influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures
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