Layer-dependent optically-induced spin polarization in InSe

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility, tunable direct bandgap, and quantum transport. There are predictions of spin-dependent optical selection rules suggesting potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the $g$-factor for InSe was extracted. Further investigations are done by calculating precession values using a $\textbf{k} \cdot \textbf{p}$ model, which is supported by \textit{ab-initio} density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for opto-spintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.Comment: 11 pages, 6 figures, supplemental materia

Photoconductivity of Graphene in a Magnetic Field

Graphene is a single-atom-thick allotrope of carbon that displays a variety of novel physical behavior due to its geometry. Graphene is referred to as a ``two-dimensional material\u27\u27 since electrons in the material are confined to one atomic plane. This spatial confinement gives graphene its unique properties, which are both interesting from a purely scientific position and promising for technological applications. A better understanding of graphene\u27s electronic and optoelectronic properties helps shed light on the physics of this novel material, and informs the development of graphene-based technologies. In this project, we investigate photoresponse of graphene under the influence of high magnetic fields. We seek to better understand the current body knowledge in this field through a review of relevant literature. This body of knowledge is further developed through the nanofabrication of two graphene-on-boron-nitride devices for a future photoconductivity measurement at the National High Magnetic Field Laboratory. These devices are custom-designed to meet specific requirements and restrictions of the measurement set-up