Distinct physicochemical characteristics of different beef from Qinchuan cattle carcass

A total of 30 Qinchuan cattle were used to investigate the physicochemical characteristics of beef from three different parts of cattle carcass, namely longissimus dorsi (LD), serratus ventralis (SV) and semitendinosus (ST). Multiple parameters were ranked in the descending order of ST > SV > LD, and include muscle pH, protein, ash, drip loss, cooking loss, shear force and hydroxyproline (Hyp). In contrast, water, fat, lightness (L*) and redness (a*) was in the opposite order. C18:1 and C16:0 were the main intramuscular fatty acids (FA), and C19 - C22 were undetectable. The saturated fatty acids (SFA) content were ranked in the descending order of LD > SV > ST, whereas unsaturated fatty acids (UFA) were the opposite. The essential amino acid (EAA) content were ranked in the descending order of ST > SV ≥ LD. No significant differences in the contents of mineral elements were observed in LD, SV and ST. The ranking patterns were similar in both males and females. Taken together, these results revealed significant differences in physicochemical properties of LD, SV and ST, except the mineral elements.Key words: Cattle, Qinchuan breed, carcass, different beef, physicochemical characteristics

Meat tenderness and water holding capacity are associated with a 959 A G mutation in the MyoG gene of Chinese indigenous cattle

Myogenin (MyoG) gene has mapped at 25 to 73 cm interval on BTA 16 where several quantitative trait loci for carcass weight and marbling are located. In this study, we determined the associations between gene-specific single nucleotide polymorphisms (SNP) in MyoG gene, to investigate whether this polymorphism affected meat quality characteristics and to evaluate the allelic and genotypic frequencies of six native Chinese cattle breeds. The breeds were Jiaxian red (JXR), Luxi (LX), Nan-yang (NY), Qinchuan (QC), Xia-Nan (XN) and Xue long (XL). Our results suggested a transition of A → G at position 959 in exon 1 of the MyoG gene in cattle that caused the substitution (959Serine/959Cysteine). The A959G SNP was significantly associated with water holding capacity and meat tenderness (P < 0.05), while no effect of genotype on back fat thickness, rib area, loin eye height, eye muscle width and marbling was disclosed (P > 0.05). The x2-test revealed that the genotype distributions among the five cattle breeds (JXR, LX, NY, QC and XL) agreed with Hardy-Weinberg equilibrium (P > 0.05), although, one breed (XN) was not in Hardy-Weinberg equilibrium (P < 0.01). We concluded that, A959G SNP can be used as an efficacious genetic marker for meat quality traits in native Chinese cattle breeds but a much large number of animals are required for Marker assisted selection.Key words: Cattle, genotypic frequencies, myogenin (MyoG) gene, meat quality, single nucleotide polymorphism

Lower edge of locked Main Himalayan Thrust unzipped by the 2015 Gorkha earthquake

Large earthquakes are thought to release strain on previously locked faults. However, the details of how earthquakes are initiated, grow and terminate in relation to pre-seismically locked and creeping patches is unclear ^1-4. The 2015 Mw 7.8 Gorkha, Nepal earthquake occurred close to Kathmandu in a region where the prior pattern of fault locking is well documented ^5. Here we analyze this event using seismological records measured at teleseismic distances and Synthetic Aperture Radar imagery. We show that the earthquake originated northwest of Kathmandu within a cluster of background seismicity that fringes the bottom of the locked portion of the Main Himalayan Thrust fault (MHT). The rupture propagated eastwards for about 140 km, unzipping the lower edge of the locked portion of the fault. High-frequency seismic waves radiated continuously as the slip pulse propagated at about 2.8 km s-1 along this zone of presumably high and heterogeneous pre-¬seismic stress at the seismic-aseismic transition. Eastward unzipping of the fault resumed during the Mw 7.3 aftershock on May 12. The transfer of stress to neighbouring regions during the Gorkha earthquake should facilitate future rupture of the areas of the MHT adjacent and up-dip of the Gorkha earthquake rupture.This is the author accepted manuscript. The final version is available from Nature Publishing Group via http://dx.doi.org/10.1038/ngeo251

Impact of neuroradiologist second opinion on staging and management of head and neck cancer

OBJECTIVE: Patients with head and neck cancer frequently present to academic tertiary referral centers with imaging studies that have been performed and interpreted elsewhere. At our institution, these outside head and neck imaging studies undergo formal second opinion reporting by a fellowship-trained academic neuroradiologist with expertise in head and neck imaging. The purpose of this study was to determine the impact of this practice on cancer staging and patient management. METHODS: Our institutional review board approved the retrospective review of randomized original and second opinion reports for 94 consecutive cases of biopsy proven or clinically suspected head and neck cancer in calendar year 2010. Discrepancy rates for staging and recommended patient management were calculated and, for the 32% (30/94) of cases that subsequently went to surgery, the accuracies of the reports were determined relative to the pathologic staging gold standard. RESULTS: Following neuroradiologist second opinion review, the cancer stage changed in 56% (53/94) of cases and the recommended management changed in 38% (36/94) of patients with head and neck cancer. When compared to the pathologic staging gold standard, the second opinion was correct 93% (28/30) of the time. CONCLUSION: In a majority of patients with head and neck cancer, neuroradiologist second opinion review of their outside imaging studies resulted in an accurate change in their cancer stage and this frequently led to a change in their management plan

Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. Al room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved