Numerical analysis of the resistance behavior of an electrostatically-induced graphene double junction

We present a numerical approach that we have developed in order to reproduce and explain the resistance behavior recently observed, as a function of the backgate voltage and of the position of a biased scanning probe, in a graphene flake in which a double p-n junction has been electrostatically induced. A simplified electrostatic model has been adopted to simulate the effect of gate voltages on the potential landscape, assuming for it a slow variation in space and using a simple capacitive model for the coupling between the electrodes and the graphene sheet. The transport analysis has then been performed with a solution of the Dirac equation in the reciprocal space coupled with a recursive scattering matrix approach. The efficiency of the adopted numerical procedure has allowed us to explore a wide range of possible potential landscapes and bias points, with the result of achieving a good agreement with available experimental data

Pseudospin-driven spin relaxation mechanism in graphene

The prospect of transporting spin information over long distances in graphene, possible because of its small intrinsic spin-orbit coupling (SOC) and vanishing hyperfine interaction, has stimulated intense research exploring spintronics applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for non-magnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, unique to graphene. The mixing between spin and pseudospin-related Berrya's phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.The research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement number 604391 Graphene Flagship. This work was also funded by Spanish Ministry of Economy and Competitiveness under contracts MAT2012-33911 and MAT2010-18065. S.O.V. acknowledges ERC Grant agreement 308023 SPINBOUND.Peer Reviewe