Spin relaxation and antisymmetric exchange in n-doped III-V semiconductor

Recently K. Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in $n$-doped GaAs in the regime close to the metal-insulator transition. We derive the correct spin Hamiltonian and apply it to the determination of spin dephasing time using the method of moments expansion. We argue that the proposed mechanism is insufficient to explain the observed values of the spin relaxation time.Comment: 5 pages, 1 figure

Spin-Orbit Coupling and Time-Reversal Symmetry in Quantum Gates

We study the effect of spin-orbit coupling on quantum gates produced by pulsing the exchange interaction between two single electron quantum dots. Spin-orbit coupling enters as a small spin precession when electrons tunnel between dots. For adiabatic pulses the resulting gate is described by a unitary operator acting on the four-dimensional Hilbert space of two qubits. If the precession axis is fixed, time-symmetric pulsing constrains the set of possible gates to those which, when combined with single qubit rotations, can be used in a simple CNOT construction. Deviations from time-symmetric pulsing spoil this construction. The effect of time asymmetry is studied by numerically integrating the Schr\"odinger equation using parameters appropriate for GaAs quantum dots. Deviations of the implemented gate from the desired form are shown to be proportional to dimensionless measures of both spin-orbit coupling and time asymmetry of the pulse.Comment: 10 pages, 3 figure