8 research outputs found
Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates
- Author
- Publication venue
- 'Elsevier BV'
- Publication date
- Field of study
Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers
- Author
- Publication venue
- 'Springer Science and Business Media LLC'
- Publication date
- Field of study
Epitaxial growth of lattice mismatched SrF2 films on (100) GaAs
- Author
- Publication venue
- 'Springer Science and Business Media LLC'
- Publication date
- Field of study
Thick crack-free CaF2 epitaxial layer on GaAs (100) substrate by molecular beam epitaxy
- Author
- Publication venue
- 'Springer Science and Business Media LLC'
- Publication date
- Field of study
Recommended from our members
Epitaxial growth of silicon on CoSi sub 2 (001)/Si(001)
- Author
- Gibson
- Jimenez J.R.
- Luo L.
- Mitchell T.E. (Los Alamos National Lab., NM (USA))
- Schowalter L.J. (Rensselaer Polytechnic Inst., Troy, NY (USA). Center for Integrated Electronics Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Physics)
- Xiao Q.F. (State Univ. of New York, Albany, NY (USA). Dept. of Physics Rensselaer Polytechnic Inst., Troy, NY (USA). Center for Integrated Electronics)
- Publication venue
- Los Alamos National Laboratory
- Publication date
- 01/01/1991
- Field of study
Epitaxial Si layers have been grown under a variety of growth conditions on CoSi{sub 2}(001) by molecular beam epitaxy (MBE). The structural properties of the Si overgrowth were studied by in-situ Reflection High Energy Electron Diffraction (RHEED), as well as ex-situ MeV {sup 4}He{sup +} ion channeling and High Resolution Transmission Electron Microscopy (HRTEM). Strong influences of the CoSi{sub 2} surface reconstruction on the Si overgrowth have been observed. RHEED studies show islanding growth Si on the CoSi{sub 2} (001) ({radical}2 {times} {radical}2)R45 reconstructed surface, but smooth growth of Si on the CoSi{sub 2}(001) ({radical}2 {times} {radical}2)R45 reconstructed surface, under the same growth conditions. The growth of Si on thin layers of CoSi{sub 2} (2nm-6nm) with ({radical}2 {times} {radical}2)R45 reconstructed surface at 160{degrees}C results in high crystalline quality for the Si top layer, as indicated by good channeling minimum yeild ({chi}{sub min} < 6%), but cross-sectional TEM shows that the CoSi{sub 2} layers are discontinuous. We also report preliminary results on Si grown on a 2 {times} 2 reconstructed CoSi{sub 2}(001) surface. 81 refs., 5 figs
Polarity Analysis of Self-Seeded Aluminum Nitride Crystals Grown by Sublimation
- Author
- Changjian Ji
- Chenghong Duan
- D. Zhuang
- D. Zhuang
- D. Zhuang
- E.N. Mokhov
- F. Zhong
- Fei Zhong
- G. Kamler
- G. Kamler
- J. Senawiratne
- J.H. Edgar
- J.L. Weyher
- K.A. Mkhoyan
- Kai Qiu
- L.J. Schowalter
- M. Beshkova
- M. Bickermann
- M. Kazan
- M. Miyanaga
- P. Lu
- Qifeng Han
- S. Pezzagna
- V. Noveski
- Xiancun Cao
- Xinhua Li
- Xiuju Zhou
- Y. Wu
- Yuqi Wang
- Z. Gu
- Z.G. Herro
- Zhijun Yin
- Publication venue
- 'Springer Science and Business Media LLC'
- Publication date
- Field of study
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- Pirzio Biroli Stefanelli L.
- Pleket H.W.
- Plöger O.
- Poland F.
- Preisigke F.
- Premerstein A.v.
- Prigent P.
- Prostmeier F.R.
- Provan I.
- Pugliese-Carratelli G.
- Pöhlmann W.
- Quet M.-H.
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- v. Henten J.W.
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- Publication venue
- 'Vandenhoeck & Ruprecht GmbH & Co, KG'
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