E 1 Gap Of Wurtzite Inas Single Nanowires Measured By Means Of Resonant Raman Spectroscopy

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase. © 2011 American Institute of Physics.1399473474 Int. Union Pure Appl. Phys. (IUPAP C8 Comm.),Korean Ministry of Education, Science and Technology,Seoul Metropolitan Government,Office of Naval Research Global,Korea Tourism OrganizationDick, K.A., (2008) Prog. Cryst. Growth Charact. Mater., 54, pp. 138-173Milnes, A.G., Polyakov, A.Y., (1993) Mater. Sci. Eng. B, 18, pp. 237-259Dayeh, S.A., Susac, D., Kavanagh, K.L., Yu, E.T., Wang, D., (2009) Adv. Mater., 19, pp. 2102-2108Cardona, M., (1961) J. Appl. Phys., 32 (SUPPL.), pp. 2151-2155Antoci, S., Reguzzoni, E., Samoggia, G., (1970) Phys. Rev. Lett., 24, pp. 1304-1307Arguello, C.A., Rousseau, D.L., Porto, S.P.S., (1969) Phys. Rev., 181, pp. 1351-136

Heat Source Distribution, Vertical Structure, And Coating Influences On The Temperature Of Operating 0.98 μm Laser Diodes: Photothermal Reflectance Measurements

In the present work single-quantum-well laser diodes operating at 0.98 μm are investigated by photothermal reflectance microscopy. Temperature maps were obtained for the output facet of all devices studied. Furthermore, the temperature distribution was determined along the cavity (on the ridge) of lasers soldered with the junction side up. Near the facets, the measured temperature was found to be about seven times the bulk's temperature, indicating the presence of an important surface heat source. The signal phase distribution of the laser facet shows the important role of the vertical structure on the heat confinement. Comparison between experiments and calculations shows that the confinement layers (GaAlAs and GaInP) thermal parameters are the principal responsible for the heat propagation in these structures near the active region. The same calculations show the role of the coating (Al2O3) in the heat propagation, and give a quantitative ratio between surface and bulk heat sources. Measurements made on the facet and on the ridge as a function of injection current were found to present a quite similar behavior, leading to the conclusion that thermal effects are strongly dominant in these measurements, masking any carrier or electroreflectance effects. Finally, measurements made under different light output power conditions and under the same injection current conditions showed that the surface heat source is caused by laser light absorption at the facets. © 1998 American Institute of Physics.84734913499Eliseev, P.G., (1996) Quantum Electron., 20, p. 1Epperlein, P.W., (1993) Jpn. J. Appl. Phys., Part 1, 32, p. 5514Mansanares, A.M., Fournier, D., Boccara, A.C., (1993) Electron. Lett., 29, p. 2045Mansanares, A.M., Roger, J.P., Fournier, D., Boccara, A.C., (1994) Appl. Phys. Lett., 64, p. 4Voigt, P., Hartmann, J., Reichling, M., (1996) J. Appl. Phys., 80, p. 2013Batista, J.A., Mansanares, A.M., Da Silva, E.C., Fournier, D., (1997) J. Appl. Phys., 82, p. 423Rosencwaig, A., Thermal wave characterization and inspection of semiconductor materials and devices (1987) Photoacoustic and Thermal Wave Phenomena in Semiconductors, pp. 97-135. , edited by A. Mandelis North-Holland, New YorkForget, B.C., Fournier, D., Gusev, V.E., (1992) Appl. Phys. Lett., 61, p. 2341Tang, W.C., Rosen, H.J., Vettiger, P., Webb, D.J., (1991) Appl. Phys. Lett., 59, p. 1005Nakwaski, W., (1988) J. Appl. Phys., 64, p. 159Cherrak, R., Roger, J.P., Fournier, D., Mansanares, A.M., (1996) Prog. Nat. Sci., 6, pp. S-535Klocek, P., (1991) Handbook of Infrared Optical Materials, , Marcel Dekker, Inc., New YorkEpperlein, P.W., Bona, G.L., (1993) Appl. Phys. Lett., 62, p. 307