Semiconductor detectors for neutron flux measurements

Abstract Silicon detectors with 235U converter for neutron flux measurements over a wide energy range (from thermal up to epithemal neutrons) have been developed. The surface-barrier detectors with plastic converters were developed for fast neutron detection

Silicon detectors for γ-ray and β-spectroscopy

Large active volume Si(Li) detectors were successfully developed for γ-ray spectrometry at room temperature that show a sufficient efficiency and an energy resolution that is better than scintillation detectors. The higher efficiency of the proposed detectors with respect to normal silicon diodes is achieved by increasing the active volume. For this purpose special attention is given to the selection of the initial material which has to show homogeneous electro-physical parameters, low concentration of oxygen impurities and high structural perfection. The technique of using lithium ions is used as these drift into large depths and hence the profile of the impurity distribution is optimized

Study of Neutron Pre-Irradiated Silicon for Nuclear Detectors

The ways of increasing the radiation hardness of silicon were considered. It was then experimentally shown that a preliminary irradiation of the bulk silicon introduces sinks for radiation defects that leads to an increased radiation hardness of the silicon. Neutron transmutation doping of silicon can be considered as one form of preliminary radiation. It was shown that for neutron transmutated silicon the carrier removal rate in NTD after γ-irradiation is more than one order of magnitude smaller than in a standard reference specimen, but the carriers removal rate after neutron irradiation is approximately a factor of two less