Combined semiconductor injection magnetic field sensors for wireless information networks

The possibility of sensitivity increasing of magnetic field sensors by combining different types of sensitive elements in one sensor circuit is experimentally investigated. For this purpose, four new sensor constructions are proposed: based on bridge circuit, based on magnetotransistor in combination with magnetodiode or with second magnetotransistor and with frequency output. More thermostable and radiation-resistant sensor with 10 times greater sensitivity than in conventional two-diode bridge sensor is obtained with four polar magnetodiodes in bridge circuit, instead of two non-polar ones. Sensor constructions with two-collector magnetotransistors in combination with two polar magnetodiodes or one additional magnetotransistor are described. The sensitivity of such devices is 6 and 4 times higher compared to single-transistor sensors, while their temperature stability and radiation resistance increase. Relaxation generator circuit based on unijunction transistor is proposed as magnetic field sensor with frequency output. Inclusion of additional magnetodiode in generator circuit increases sensitivity by 2.3 times in comparison with single-transistor sensor and improves environmental stability. The described devices can be used as effective magnetic field sensors in wireless communication networks