649 research outputs found

    Universal behavior of optimal paths in weighted networks with general disorder

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    We study the statistics of the optimal path in both random and scale free networks, where weights ww are taken from a general distribution P(w)P(w). We find that different types of disorder lead to the same universal behavior. Specifically, we find that a single parameter (SAL1/νS \equiv AL^{-1/\nu} for dd-dimensional lattices, and SAN1/3S\equiv AN^{-1/3} for random networks) determines the distributions of the optimal path length, including both strong and weak disorder regimes. Here ν\nu is the percolation connectivity exponent, and AA depends on the percolation threshold and P(w)P(w). For P(w)P(w) uniform, Poisson or Gaussian the crossover from weak to strong does not occur, and only weak disorder exists.Comment: Accepted by PR

    Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

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    We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the Ar pressure and the working distance between the magnetron source and the substrate surface. Below Pc smooth films are produced, while above Pc roughness increases abruptly, consistent with a model in which particles aggregate in the deposition flux before reaching the growth surface. The results from WSi2 films are correlated with in situ measurement of stress in WSi2/Si multilayers, which exhibits a corresponding transition from compressive to tensile stress at Pc. The tensile stress is attributed to coalescence of nanoparticles and the elimination of nano-voids.Comment: 16 pages, 10 figures; v3: published versio

    Black Hole Energy Release to the Gaseous Universe

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    We estimate the energy release of black hole formation to the intra-cluster medium of the Coma cluster and find that this is comparable to the present day energy content. Therefore an energetic and maybe hydrostatic influence is possible. Our calculations rely on the assumption of an universal black hole to galaxy mass ratio (more exactly: spheroidal mass component of the stellar population), for which there is growing evidence. On a cosmological scale, there is also an energy release of black hole formation comparable to what is expected to be present within the thermal gas, caused by the process of structure formation. This indicates an important dynamical influence, neglected by present day structure formation simulations. This estimate of cosmological black hole energy release is independent of the black hole to galaxy mass ratio, but consistent with its value.Comment: 4 pages, LaTeX2e, no figures, accepted by A&A Letter

    Simulating the effects of management practices on cropland soilorganic carbon changes in the Temperate Prairies Ecoregion of theUnited States from 1980 to 2012

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    Understanding the effects of management practices on soil organic carbon (SOC) is important for design-ing effective policies to mitigate greenhouse gas emissions in agriculture. In the Midwest United States,management practices in the croplands have been improved to increase crop production and reduce SOCloss since the 1980s. Many studies of SOC dynamics in croplands have been performed to understandthe effects of management, but the results are still not conclusive. This study quantified SOC dynam-ics in the Midwest croplands from 1980 to 2012 with the General Ensemble Biogeochemical ModellingSystem (GEMS) and available management data. Our results showed that the total SOC in the croplandsdecreased from 1190 Tg C in 1980 to 1107 TgC in 1995, and then increased to 1176 TgC in 2012. Contin-uous cropping and intensive tillage may have driven SOC loss in the early period. The increase of cropproduction and adoption of conservation tillage increased the total SOC so that the decrease in the totalSOC stock after 32 years was only 1%. The small change in average SOC did not reflect the large spatialvariations of SOC change in the region. Major SOC losses occurred in the north and south of the region,where SOC baseline values were high and cropland production was low. The SOC gains took place in thecentral part of the region where SOC baseline values were moderate and cropland production was higherthan the other areas. We simulated multiple land-use land-cover (LULC) change scenarios and analyzedthe results. The analysis showed that among all the LULC changes, agricultural technology that increasedcropland production had the greatest impact on SOC changes, followed by the tillage practices, changesin crop species, and the conversions of cropland to other land use. Information on management practiceinduced spatial variation in SOC can be useful for policy makers and farm managers to develop long-termmanagement strategies for increasing SOC sequestration in different areas

    Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire

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    A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearly two orders of magnitude-by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30. In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.Comment: Revtex4, 19 pages, 10 figures with JPEG forma
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