Intermediate reading exercises for use with the Durrell Analysis of Reading Difficulty.

Thesis (Ed.M.)--Boston Universit

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Includes bibliographical references.We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 °C from a 15-μm-diameter device.This letter was supported by the US Department of Energy under contract no. DE-AC04-94AL85000

Index guiding dependent effects in implant and oxide confined vertical-cavity lasers

Includes bibliographical references.Implant and oxide confined vertical-cavity surface-emitting lasers are compared in terms of properties dependent upon the nature of index guiding in the two structures including CW threshold current scaling with size, light-current linearity, pulsed operation delay, and beam profiles. The oxide confined lasers, fabricated by wet thermal oxidation, have a built-in index guide and thus exhibit substantially better properties than do lasers from the same wafer fabricated by proton implantation which rely on a thermal lens to reduce diffraction losses.This work was supported by the U.S. Department of Energy under Contract DEAC04-94AL85000

Gain-dependent polarization properties of vertical-cavity lasers

Includes bibliographical references.We show that the partitioning of power into the two orthogonal eigen polarizations of infra-red gain-guided vertical-cavity lasers depends upon the relative spectral overlap of the nondegenerate polarization cavity resonances with the laser gain spectrum. Furthermore, at the condition where the polarization resonances and the peak laser gain are aligned, abrupt switching of power between the eigen polarizations is observed as the gain sweeps through the polarization resonances. The gain-dependence of the polarization requires spectral splitting between the eigen polarizations, which is found to be strongly influenced by local strain. The polarization of the fundamental and higher-order spatial modes can be selected and maintained for all InGaAs vertical-cavity lasers in a wafer simply by employing a 20 nm or greater blue-shift offset of the peak laser gain relative to the cavity resonances.The work performed at Sandia National Laboratories is supported by the U. S. Department of Energy under contract No. DE-AC04-94AL85000

Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

Includes bibliographical references (page 209).Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5mW

Fabrication and performance of selectively oxidized vertical-cavity lasers

Includes bibliographical references.We report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. We show that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors. The oxide layers do not induce obvious crystalline defects, and continuous wave operation in excess of 650 h has been obtained. The high yield fabrication enables relatively high laser performance over a wide wavelength span. We observe submilliamp threshold currents over a wavelength range of up to 75 nm, and power conversion efficiencies at 1 mW output power of greater than 20% over a 50-nm wavelength range.The work at Sandia National Laboratories was supported in part by the United States DOE under contract No. DE-AC04-94AL85000

Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

Includes bibliographical references (page 331).A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability.This work was supported by the U.S. Department of Energy under Contract No. DE-AC04-94AL85000

High-frequency modulation of oxide-confined vertical cavity surface emitting lasers

Includes bibliographical references (page 458).High-speed studies of packaged, submilliampere threshold, oxide-confined vertical cavity surface emitting lasers show modulation bandwidths > 16GHz. Very high modulation current efficiency factors occur at low bias but decrease as the modulation bandwidth and frequency of the relative intensity noise peak saturate at higher currents