'Institute of Electrical and Electronics Engineers (IEEE)'
Abstract
Includes bibliographical references (page 209).Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5mW