67 research outputs found

    Photoelectron spectroscopy investigation of thin metal films employed as top contacts in transparent organic solar cells

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    The performance of transparent metal top contacts in organic solar cells can strongly be improved by employing surfactant layers. We use scanning electron microscopy to investigate the change in morphology upon insertion of an Al surfactant layer between 4,7-diphenyl-1,10-phenanthroline (BPhen) and a silver top contact. UV photoelectron spectroscopy measurements show the changes in energetic alignments at different steps of the organic/metal interface formation. Furthermore, using X-ray photoelectron spectroscopy depth profiling, we compare the differing intermixing processes happening within the two samples. Thereby, we can show that Al binds to BPhen molecules, acting as surfactant for subsequently deposited Ag layers, while Ag without any Al surfactant layer penetrates into and intermixes with the BPhen layer. © 2010 Elsevier B.V. All rights reserved

    Hocheffiziente Organische Bauelemente — neue Entwicklungen aus Sachsen

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    Molecular doping for control of gate bias stress in organic thin film transistors

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    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. © 2014 AIP Publishing LLC
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