40 research outputs found
Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
The spin structure and spin dynamics of excitons in an ensemble of
(In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both
direct and indirect band gap dots, are studied. Time-resolved and spectral
selective techniques are used to distinguish between the direct and indirect
QDs. The exciton fine structure is studied by means of optical alignment and
optical orientation techniques in magnetic fields applied in the Faraday or
Voigt geometries. A drastic difference in emission polarization is found for
the excitons in the direct QDs involving a -valley electron and the
excitons in the indirect QDs contributed by an -valley electron. We show
that in the direct QDs the exciton spin dynamics is controlled by the
anisotropic exchange splitting, while in the indirect QDs it is determined by
the hyperfine interaction with nuclear field fluctuations. The anisotropic
exchange splitting is determined for the direct QD excitons and compared with
model calculations
Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
The spin structure and spin dynamics of excitons in an ensemble of
(In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both
direct and indirect band gap dots, are studied. Time-resolved and spectral
selective techniques are used to distinguish between the direct and indirect
QDs. The exciton fine structure is studied by means of optical alignment and
optical orientation techniques in magnetic fields applied in the Faraday or
Voigt geometries. A drastic difference in emission polarization is found for
the excitons in the direct QDs involving a -valley electron and the
excitons in the indirect QDs contributed by an -valley electron. We show
that in the direct QDs the exciton spin dynamics is controlled by the
anisotropic exchange splitting, while in the indirect QDs it is determined by
the hyperfine interaction with nuclear field fluctuations. The anisotropic
exchange splitting is determined for the direct QD excitons and compared with
model calculations
Electrical resistance associated with the scattering of optically oriented electrons in n-GaAs
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes
place when a spin-polarized current flows through the sample, was detected.
Under conditions of optical pumping of electron spins, an external magnetic
field directed along the electric current and perpendicular to the oriented
spins decreases the resistance of the material. The phenomenon is due to the
spin-dependent scattering of electrons by neutral donors. It was found that the
sign of the magnetoresistance does not depend on the sign of the exciting light
circular polarization, the effect is even with respect to the sign of the spin
polarization of the carriers, which indicates a correlation between the spins
of optically oriented free electrons and electrons localized on donors.Comment: 9 pages, 4 figure