Scanning tunneling microscopy studies of self-assembled nanostructures on graphite

Ph.DDOCTOR OF PHILOSOPH

Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device

The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I-V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier

Flexible perylenediimide/GaN organic-inorganic hybrid system with exciting optical and interfacial properties

We report the band gap tuning and facilitated charge transport at perylenediimide (PDI)/GaN interface in organic-inorganic hybrid nanostructure system over flexible titanium (Ti) foil. Energy levels of the materials perfectly align and facilitate high efficiency charge transfer from electron rich n-GaN to electron deficient PDI molecules. Proper interface formation resulted in band gap tuning as well as facilitated electron transport as evident in I-V characteristics. Growth of PDI/GaN hybrid system with band gap tuning from ultra-violet to visible region and excellent electrical properties open up new paradigm for fabrication of efficient optoelectronics devices on flexible substrates

Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15000 s (4 hrs) under small bias voltage (42V). Nearly sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm2) shows one fold increase in photo-charge carriers.Comment: 18 pages, 7 figure

Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Epitaxial thin GaN films (similar to 60 nm) have been grown on a-plane sapphire substrates at different growth temperatures (500-700 degrees C) using laser molecular beam epitaxy (LMBE). The effect of growth temperatures on the structural and optical properties of GaN layers grown on low temperature (LT) GaN buffer on prenitridated a-sapphire have been studied systematically. The in situ reflection high energy electron diffraction pattern revealed the three-dimensional epitaxial growth of GaN films on a-sapphire under the adopted growth conditions. The full width at half maximum (FWHM) value of x-ray rocking curves (XRCs) along GaN (0002) and (10-12) planes decreases with increasing growth temperature. The FWHM values of (0002) and (10-12) XRC for the 700 degrees C grown GaN film are 1.09 degrees and 1.08 degrees, respectively. Atomic force microscopy characterization showed that the grain size of GaN increases from 30-60 to 70-125 nm with the increase in growth temperature as GaN coalescence time is shorter at high temperature. The refractive index value for the dense GaN film grown at 600 degrees C is obtained to be similar to 2.19 at the wavelength of 632 nm as deduced by spectroscopic ellipsometry. Photoluminescence spectroscopy confirmed that the epitaxial GaN layers grown on a-sapphire at 600-700 degrees C possess near band edge emission at similar to 3.39 eV, close to bulk GaN. The GaN growth at 700 degrees C without a buffer still produced films with better crystalline and optical properties, but their surface morphology and coverage were inferior to those of the films grown with LT buffer. The results show that the growth temperature strongly influences the structural and optical quality of LMBE grown epitaxial GaN thin films on a-plane sapphire, and a growth temperature of >600 degrees C is necessary to achieve good quality GaN films. Published by the AVS

Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network

An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorods network grown on an intermediate layer of N:GaN on a nitridated HfO2(N:HfO2)/SiO2/p-Si substrate. The fabricated Au/GaN/N:GaN/N:HfO2/Ag heterostructure exhibited a giant change (OFF/ON ratio > 50 without applying any external electrical field) in its conductance when illuminated by a very weak (25 mW cm(-2)) near-UV monochromatic light with a low dark current (nearly 20 nA). The presented near-UV photodetector offers photoresponsivity of approximate to 2.4 mA W-1 at an applied voltage of 1 V. We observed an optically generated internal open circuit voltage of approximate to 155 mV and short circuit current approximate to 430 nA, which can be attributed to the quantum confinement of free charge carriers in the nanorod matrix. Interestingly, it also shows a negative capacitance after near-UV illumination. It has great potential as a self-powered UV photodetector and in metamaterial applications

IN SITU STM INVESTIGATION OF Ge NANOSTRUCTURES WITH AND WITHOUT Sb ON GRAPHITE

Germanium was deposited onto highly oriented pyrolytic graphite (HOPG) with and without antimony in ultra-high vacuum. The surface morphology was analyzed using in situ scanning tunneling microscopy (STM) at room temperature (RT). The film grows exclusively in 3D island mode and was affected significantly by substrate defects. At initial stage, nucleation of cluster occurred at step edges and defect sites. Later, we found various types of Ge nanostructures on HOPG in different deposition conditions and stages, including cluster chains, cluster islands, nanowires, and double layer ramified islands at RT. Compact Ge islands were observed when depositing at a substrate temperature of 450 K or after an annealing at 600 K following RT deposition. In addition, the pre-deposited Sb on graphite enhances the sticking probability and suppresses the surface diffusion of Ge atoms, resulting in a significant increase in Ge cluster island density on HOPG terraces.Germanium, graphite, antimony, cluster, surfactant, scanning tunneling microscopy (STM)

Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 degrees C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 degrees C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 degrees C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique

Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Epitaxial thin GaN films (similar to 60 nm) have been grown on a-plane sapphire substrates at different growth temperatures (500-700 degrees C) using laser molecular beam epitaxy (LMBE). The effect of growth temperatures on the structural and optical properties of GaN layers grown on low temperature (LT) GaN buffer on prenitridated a-sapphire have been studied systematically. The in situ reflection high energy electron diffraction pattern revealed the three-dimensional epitaxial growth of GaN films on a-sapphire under the adopted growth conditions. The full width at half maximum (FWHM) value of x-ray rocking curves (XRCs) along GaN (0002) and (10-12) planes decreases with increasing growth temperature. The FWHM values of (0002) and (10-12) XRC for the 700 degrees C grown GaN film are 1.09 degrees and 1.08 degrees, respectively. Atomic force microscopy characterization showed that the grain size of GaN increases from 30-60 to 70-125 nm with the increase in growth temperature as GaN coalescence time is shorter at high temperature. The refractive index value for the dense GaN film grown at 600 degrees C is obtained to be similar to 2.19 at the wavelength of 632 nm as deduced by spectroscopic ellipsometry. Photoluminescence spectroscopy confirmed that the epitaxial GaN layers grown on a-sapphire at 600-700 degrees C possess near band edge emission at similar to 3.39 eV, close to bulk GaN. The GaN growth at 700 degrees C without a buffer still produced films with better crystalline and optical properties, but their surface morphology and coverage were inferior to those of the films grown with LT buffer. The results show that the growth temperature strongly influences the structural and optical quality of LMBE grown epitaxial GaN thin films on a-plane sapphire, and a growth temperature of >600 degrees C is necessary to achieve good quality GaN films. Published by the AVS