Magnetodielectric effect of Bi6Fe2Ti3O18 film under an ultra-low magnetic field

Good quality and fine grain Bi6Fe2Ti3O18 magnetic ferroelectric films with single-phase layered perovskite structure have been successfully prepared via metal organic decomposition (MOD) method. Results of low-temperature magnetocapacitance measurements reveal that an ultra-low magnetic field of 10 Oe can produce a nontrivial magnetodielectric (MD) response in zero-field-cooling condition, and the relative variation of dielectric constants in magnetic field is positive, i.e., MD=0.05, when T<55K, but negative with a maximum of MD=-0.14 when 55K<T<190K. The magnetodielectric effect appears a sign change at 55K, which is due to transition from antiferromagnetic to weak ferromagnetic; and vanishes abruptly around 190K, which is thought to be associated with order-disorder transition of iron ion at B site of perovskite structures. The ultra-low-field magnetodielectric behaviour of Bi6Fe2Ti3O18 film has been discussed in the light of quasi-two-dimension unique nature of local spin order in ferroelectric film. Our results allow expectation on low-cost applications of detectors and switches for extremely weak magnetic fields in a wide temperature range 55K-190K.Comment: 10 pages 4 figures, planned to submit to J. Phys.: Condensed Matte

Spin-Orbit Assisted Variable-Range Hopping in Strong Magnetic Fields

It is shown that in the presence of strong magnetic fields, spin-orbit scattering causes a sharp increase in the effective density of states in the variable-range hopping regime when temperature decreases. This effect leads to an exponential enhancement of the conductance above its value without spin-orbit scattering. Thus an experimental study of the hopping conductivity in a fixed, large magnetic field, is a sensitive tool to explore the spin-orbit scattering parameters in the strongly localized regime.Comment: 9 pages + 2 figures (enclosed), Revte

Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 K and 1.90 K. At low densities the resistance goes to infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance diverges as T goes to 0.Comment: 4 pages, including 4 figures. References adde

Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity

Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is accompanied in strong magnetic fields by a substantial change in the character of the temperature dependence of the conductivity. This implies that spins play an important role in 2D VRH conductivity because the processes of orbital origin are not relevant to the observed effect. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.Comment: 10 pages, 4 jpeg figure

Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.Comment: 6 pages, 5 figure

Tenfold Magnetoconductance in a Non-Magnetic Metal Film

We present magnetoconductance (MC) measurements of homogeneously disordered Be films whose zero field sheet conductance (G) is described by the Efros-Shklovskii hopping law $G(T)=(2e^2/h)\exp{-(T_o/T)^{1/2}}$. The low field MC of the films is negative with G decreasing 200% below 1 T. In contrast the MC above 1 T is strongly positive. At 8 T, G increases 1000% in perpendicular field and 500% in parallel field. In the simpler parallel case, we observe {\em field enhanced} variable range hopping characterized by an attenuation of $T_o$ via the Zeeman interaction.Comment: 9 pages including 5 figure

Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions

Recently, a simple non-interacting-electron model, combining local quantum tunneling via quantum point contacts and global classical percolation, has been introduced in order to describe the observed ``metal-insulator transition'' in two dimensions [1]. Here, based upon that model, a two-species-percolation scaling theory is introduced and compared to the experimental data. The two species in this model are, on one hand, the ``metallic'' point contacts, whose critical energy lies below the Fermi energy, and on the other hand, the insulating quantum point contacts. It is shown that many features of the experiments, such as the exponential dependence of the resistance on temperature on the metallic side, the linear dependence of the exponent on density, the $e^2/h$ scale of the critical resistance, the quenching of the metallic phase by a parallel magnetic field and the non-monotonic dependence of the critical density on a perpendicular magnetic field, can be naturally explained by the model. Moreover, details such as the nonmonotonic dependence of the resistance on temperature or the inflection point of the resistance vs. parallel magnetic are also a natural consequence of the theory. The calculated parallel field dependence of the critical density agrees excellently with experiments, and is used to deduce an experimental value of the confining energy in the vertical direction. It is also shown that the resistance on the ``metallic'' side can decrease with decreasing temperature by an arbitrary factor in the degenerate regime ($T\lesssim E_F$).Comment: 8 pages, 8 figure