A universal automated complex for control and diagnostics of semiconductor devices and structures

We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs

The effect of magnetic treatment on the effectiveness of inhibition in oilfields

The article considers the possibility of increasing the efficiency of chemical reagents by treating inhibited solutions with a magnetic field. It is shown that a various method for generating the magnetic field has a different effect (Some positive some negative). The best results can be achieved with anti-scale magnetic treatment using permanent magnets. Modified inhibitors (after magnetic treatment) have enhanced protective effectby their adsorption capacity with respect to metal increases

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes. We investigated the properties of sputtered films and metal-semiconductor interfaces, as well as electrophysical parameters of contact structures and IMPATT diodes. The contact structures based on titanium borides and nitrides and zirconium borides are shown to have high thermal stability