3,072 research outputs found
Electronic transport properties through thiophenes on switchable domains
The electronic transport of electrons and holes through stacks of
,\ome ga-dicyano-,'-dibutyl- quaterthiophene (DCNDBQT)
as part of a nov el organic ferroic field-effect transistor (OFFET) is
investigated. The novel ap plication of a ferroelectric instead of a dielectric
substrate provides the poss ibility to switch bit-wise the ferroelectric
domains and to employ the polarizat ion of these domains as a gate field in an
organic semiconductor. A device conta ining very thin DCNDBQT films of around
20 nm thickness is intended to be suitab le for logical as well as optical
applications. We investigate the device proper ties with the help of a
phenomenological model called multilayer organic light-e mitting diodes
(MOLED), which was extended to transverse fields. The results sho wed, that
space charge and image charge effects play a crucial role in these org anic
devices
Optimization of nanostructured permalloy electrodes for a lateral hybrid spin-valve structure
Ferromagnetic electrodes of a lateral semiconductor-based spin-valve
structure are designed to provide a maximum of spin-polarized injection
current. A single-domain state in remanence is a prerequisite obtained by
nanostructuring Permalloy thin film electrodes. Three regimes of aspect ratios
are identified by room temperature magnetic force microscopy: (i)
high-aspect ratios of provide the favored remanent single-domain
magnetization states, (ii) medium-aspect ratios to yield
highly remanent states with closure domains and (iii) low-aspect ratios of lead to multi-domain structures. Lateral kinks, introduced to bridge the
gap between micro- and macroscale, disturb the uniform magnetization of
electrodes with high- and medium-aspect ratios. However, vertical flanks help
to maintain a uniformly magnetized state at the ferromagnet-semiconcuctor
contact by domain wall pinning.Comment: revised version, major structural changes, figures reorganized,6
pages, 8 figures, revte
Simplified models of electromagnetic and gravitational radiation damping
In previous work the authors analysed the global properties of an approximate
model of radiation damping for charged particles. This work is put into context
and related to the original motivation of understanding approximations used in
the study of gravitational radiation damping. It is examined to what extent the
results obtained previously depend on the particular model chosen. Comparisons
are made with other models for gravitational and electromagnetic fields. The
relation of the kinetic model for which theorems were proved to certain
many-particle models with radiation damping is exhibited
Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to
the influence of gate voltage on the transfer resistance RT (output voltage
divided by input current) for different positions of a local gate electrode.
The rectifiers are trifurcated quantum wires with straight voltage stem and
oblique current-injecting leads. Depending on the gate configuration,
thermopower contributions arise from nearly-pinched stem regions which either
cancel each other or impose upon the ballistic signal with same or opposite
polarity. At best, this enhances RT to a maximum value of 470 Ohm close to
threshold voltage
Exponential splitting of bound states in a waveguide with a pair of distant windows
We consider Laplacian in a straight planar strip with Dirichlet boundary
which has two Neumann ``windows'' of the same length the centers of which are
apart, and study the asymptotic behaviour of the discrete spectrum as
. It is shown that there are pairs of eigenvalues around each
isolated eigenvalue of a single-window strip and their distances vanish
exponentially in the limit . We derive an asymptotic expansion also
in the case where a single window gives rise to a threshold resonance which the
presence of the other window turns into a single isolated eigenvalue
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