Symmetry breaking as the origin of zero-differential resistance states of a 2DEG in strong magnetic fields

Zero resistance differential states have been observed in two-dimensional electron gases (2DEG) subject to a magnetic field and a strong dc current. In a recent work we presented a model to describe the nonlinear transport regime of this phenomenon. From the analysis of the differential resistivity and the longitudinal voltage we predicted the formation of negative differential resistivity states, although these states are known to be unstable. Based on our model, we derive an analytical approximated expression for the Voltage-Current characteristics, that captures the main elements of the problem. The result allow us to construct an energy functional for the system. In the zero temperature limit, the system presents a quantum phase transition, with the control parameter given by the magnetic field. It is noted that above a threshold value ($B>B_{th}$), the symmetry is spontaneously broken. At sufficiently high magnetic field and low temperature the model predicts a phase with a non-vanishing permanent current; this is a novel phase that has not been observed so far.Comment: 6 pages, 2 figure

Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor

A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non paramagnetic centers both under CW and pulsed optical excitation. Emphasis is given to the effect of the competition between paramagnetic centers and non paramagnetic centers which allows us to reproduce the measured characteristics of the spin-dependent recombination power dependence. Particular attention is paid to the role of an external magnetic field in Voigt geometry. The photoconductivity exhibits a Hanle-type curve whereas the spin polarization of electrons shows two superimposed Lorentzian curves with different widths, respectively related to the recombination of free and trapped electrons. The model is capable of reproducing qualitatively and quantitatively the most important features of photoluminescence and photocurrent experiments and is helpful in providing insight on the various mechanisms involved in the electron spin polarization and filtering in GaAsN semiconductors.Comment: 10 pages, 5 figure

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.Comment: 4 pages, 3 figure