Application of Cryogenic Treatment to Extend the Life of the TiAlN-Coated Tungsten Carbide Milling Cutter

Cutting tools are important to the manufacturing industry since they will affect production efficiency and product quality. Cryogenic treatment can improve the material properties by decreasing residual stress, stabilizing dimensional accuracy, and increasing wear resistance. The purpose of this study is to investigate the feasibility and effect of cryogenic treatment on the performance of TiAlN-coated tungsten carbide milling cutters for machining the Inconel alloy 625 in terms of different testing methods (e.g., hardness, wear resistance, residual stress, microstructure, and tool life test). Experimental results indicate that after cryogenic treatment there is less wear, the microstructure is denser, residual stress is decreased, the adhesion of coating and tungsten carbide is improved, and the tool life is effectively improved

Evolution of structural and magnetic properties in Ta/Ni_81Fe_(19) multilayer thin films

The interdiffusion kinetics in short period (12.8 nm) Ta/Ni81Fe19 polycrystalline multilayer films has been investigated and related to the evolution of soft magnetic properties upon thermal annealing in the temperature range 300-600-degrees-C. Small angle x-ray diffraction and transmission electron microscopy were used to estimate the multilayer period. Interdiffusion in the multilayers was directly computed from the decay of the satellites near (000) in a small angle x-ray diffraction spectrum. A kinetic analysis of interdiffusion suggests that grain growth is concurrent with grain boundary diffusion of Ta in Ni81Fe19. The evolution of soft magnetic properties of Ni81Fe19, i.e., lowering of 4piM(s) and increase in coercivity H(c), also lend support to the above analysis

Activated O2 dissociation and formation of oxide islands on the Be(0001) surface: Another atomistic model for metal oxidation

By simulating the dissociation of O2 molecules on the Be(0001) surface using the first-principles molecular dynamics approach, we propose a new atomistic model for the surface oxidation of sp metals. In our model, only the dissociation of the first oxygen molecule needs to overcome an energy barrier, while the subsequent oxygen molecules dissociate barrierlessly around the adsorption area. Consequently, oxide islands form on the metal surface, and grow up in a lateral way. We also discover that the firstly dissociated oxygen atoms are not so mobile on the Be(0001) surface, as on the Al(111) surface. Our atomistic model enlarges the knowledge on metal surface oxidations by perfectly explaining the initial stage during the surface oxidation of Be, and might be applicable to some other sp metal surfaces.Comment: 5 pages, 4 figure

Probing the inter-layer exciton physics in a MoS2_2/MoSe2_2/MoS2_2 van der Waals heterostructure

Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission.Comment: 19 pages, 3 figures. Just accepted for publication in Nano Letters (http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03184

Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi_Se antisite and partial Bi_2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy (STEM) in conjunction with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.Comment: 5 pages, 5 figure

Defect healing and charge transfer mediated valley polarization in MoS2_2/MoSe2_2/MoS2_2 trilayer van der Waals heterostructures

Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$ is completely recovered if the material is sandwiched in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures. We show by means of density-functional theory that this remarkable and unexpected result is due to defect healing: S atoms of the more reactive MoS$_2$ layers are donated to heal Se vacancy defects in the middle MoSe$_2$ layer. In addition, the trilayer structure exhibits a considerable charge-transfer mediated valley polarization of MoSe$_2$ without the need for resonant excitation. Our fabrication approach, relying solely on simple flake transfer technique, paves the way for the scalable production of large-area TMDC materials with excellent optical quality.Comment: Just accepted for publication in Nano Letters (http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b00904

Self-limited oxide formation in Ni(111) oxidation

The oxidation of the Ni(111) surface is studied experimentally with low energy electron microscopy and theoretically by calculating the electron reflectivity for realistic models of the NiO/Ni(111) surface with an ab-initio scattering theory. Oxygen exposure at 300 K under ultrahigh-vacuum conditions leads to the formation of a continuous NiO(111)-like film consisting of nanosized domains. At 750 K, we observe the formation of a nano-heterogeneous film composed primarily of NiO(111)-like surface oxide nuclei, which exhibit virtually the same energy-dependent reflectivity as in the case of 300 K and which are separated by oxygen-free Ni(111) terraces. The scattering theory explains the observed normal incidence reflectivity R(E) of both the clean and the oxidized Ni(111) surface. At low energies R(E) of the oxidized surface is determined by a forbidden gap in the k_parallel=0 projected energy spectrum of the bulk NiO crystal. However, for both low and high temperature oxidation a rapid decrease of the reflectivity in approaching zero kinetic energy is experimentally observed. This feature is shown to characterize the thickness of the oxide layer, suggesting an average oxide thickness of two NiO layers.Comment: 10 pages (in journal format), 9 figure

Towards hardware acceleration of neuroevolution for multimedia processing applications on mobile devices

This paper addresses the problem of accelerating large artificial neural networks (ANN), whose topology and weights can evolve via the use of a genetic algorithm. The proposed digital hardware architecture is capable of processing any evolved network topology, whilst at the same time providing a good trade off between throughput, area and power consumption. The latter is vital for a longer battery life on mobile devices. The architecture uses multiple parallel arithmetic units in each processing element (PE). Memory partitioning and data caching are used to minimise the effects of PE pipeline stalling. A first order minimax polynomial approximation scheme, tuned via a genetic algorithm, is used for the activation function generator. Efficient arithmetic circuitry, which leverages modified Booth recoding, column compressors and carry save adders, is adopted throughout the design