Modulation of neutral interstellar He, Ne, O in the heliosphere. Survival probabilities and abundances at IBEX

Direct sampling of neutral interstellar (NIS) atoms by the Interstellar Boundary Explorer (IBEX) can potentially provide a complementary method for studying element abundances in the Local Interstellar Cloud and processes in the heliosphere interface.}{We set the stage for abundance-aimed in-depth analysis of measurements of NIS He, Ne, and O by IBEX and determine systematic differences between abundances derived from various calculation methods and their uncertainties.}{Using a model of ionization rates of the NIS species in the heliosphere, based on independent measurements of the solar wind and solar EUV radiation, we develop a time-dependent method of calculating the survival probabilities of NIS atoms from the termination shock (TS) of the solar wind to IBEX. With them, we calculate densities of these species along the Earth's orbit and simulate the fluxes of NIS species as observed by IBEX. We study pairwise ratios of survival probabilities, densities and fluxes of NIS species at IBEX to calculate correction factors for inferring the abundances at TS.}{The analytic method to calculate the survival probabilities gives acceptable results only for He and Ne during low solar activity. For the remaining portions of the solar cycle, and at all times for O, a fully time dependent model should be used. Electron impact ionization is surprisingly important for NIS O. Interpreting the IBEX observations using the time dependent model yields the LIC Ne/O abundance of $0.16\pm40$. The uncertainty is mostly due to uncertainties in the ionization rates and in the NIS gas flow vector.}{The Ne/He, O/He and Ne/O ratios for survival probabilities, local densities, and fluxes scaled to TS systematically differ and thus an analysis based only on survival probabilities or densities is not recommended, except the Ne/O abundance for observations at low solar activity.Comment: Astronomy & Astrophysics, in press. Language and editing corrections implemente

Influence of roughness on ZDDP tribofilm formation in boundary lubricated fretting

Influence of initial surface topography on tribofilm formation in ZDDP lubricated contact was analysed. A small displacement fretting tests with sinusoidal motion were carried out in classical sphere/plane configuration. A range of surfaces with different initial roughness were prepared by milling and grinding processes. Tests were carried out using variable displacement method where amplitude of imposed displacement was gradually increased after every 1000 cycles from 2 to 30 µm. The surfaces after tribological tests were measured by interferometric profiler. Main findings confirm that initial roughness has a significant influence on antiwear tribofilm formation in boundary lubricated contact. Tribofilm form faster and require less energy to activate in case of rough surface obtained by milling process than in case of smooth grinded surface. However, in contact lubricated by ZDDP additive a significant transfer of material occurred from plane to sphere specimen

Very high two-dimensional hole gas mobilities in strained silicon germanium

We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to <=13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities

Elemental boron doping behavior in silicon molecular beam epitaxy

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures

Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions

The downwind hemisphere of the heliosphere: Eight years of IBEX-Lo observations

We present a comprehensive study of energetic neutral atoms (ENAs) of 10 eV to 2.5 keV from the downwind hemisphere of the heliosphere. These ENAs are believed to originate mostly from pickup protons and solar wind protons in the inner heliosheath. This study includes all low-energy observations made with the Interstellar Boundary Explorer over the first 8 years. Since the protons around 0.1 keV dominate the plasma pressure in the inner heliosheath in downwind direction, these ENA observations offer the unique opportunity to constrain the plasma properties and dimensions of the heliosheath where no in-situ observations are available. We first derive energy spectra of ENA intensities averaged over time for 49 macropixels covering the entire downwind hemisphere. The results confirm previous studies regarding integral intensities and the roll-over around 0.1 keV energy. With the expanded dataset we now find that ENA intensities at 0.2 and 0.1 keV seem to anti-correlate with solar activity. We then derive the product of total plasma pressure and emission thickness of protons in the heliosheath to estimate lower limits on the thickness of the inner heliosheath. The temporally averaged ENA intensities support a rather spherical shape of the termination shock and a heliosheath thickness between 150 and 210 au for most regions of the downwind hemisphere. Around the nominal downwind direction of 76{\deg} ecliptic longitude, the heliosheath is at least 280 au thick. There, the neutral hydrogen density seems to be depleted compared to upwind directions by roughly a factor of 2.Comment: Preprint of article in The Astrophysical Journa

Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C

Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated