Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.

Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications

Memoirs of Lee Kuan Yew.

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One man's view of the world : Lee Kuan Yew

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Memoirs of Lee Kuan Yew.

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