Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.

Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130

Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.

The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3]

Advances in Smart Materials and Applications

This is one of a series of special issues published in Advances in Materials Science and Engineering, focusing on the latest advances of smart materials and their applications. Evolution of engineering materials is strongly depending on the growing transformation of complexity in engineering products. New materials being designed are required to provide specific properties and demonstrate certain functional characteristics by manipulating their dimension, chemistry, and structure through various advanced technologies.Therefore, “smartness” of a material has become the topic of interest. Properties of smart materials may change accordingly to the applied external stimuli. Under the direction of the editorial team, we showcase advances of organic and inorganic based smart materials and their applications in areas of specific interest such as energy, environment, and health. A total of 9 articles are published in this special issue. Six articles are focused on production, synthesis, and optimization of smart materials; and the remaining are dedicated to application of smart materials

Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate

The effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800˚C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented in (400), (440), (541), and (543) planes for all of the investigated samples. Atomic force microscopy was utilized to acquire 2-dimensional surface topograpy of Y2O3 films subjected to different PDA time. An increment in rootmean-square roughness was perceived as PDA time was prolonged. In addition, currentvoltage and capacitance-voltage characteristics of the investigated Al/Y2O3/Si-based metaloxide-semiconductor capacitors were also presented in this work

High-K LaCeO For Passivation Of Si Substrate

High dielectric constant rare earth lanthanum cerium oxide (LaCeO) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) was carried out at 700ºC towards structural and morphological characteristics of the films. As the annealing time was increased from 15 to 45 min, a shift in the diffraction angles, peak intensity, and peak width obtained from high resolution X-ray diffraction happened and resulted in changes in term of crystallite size and lattice strain present in the films. Corresponding influence on the film roughness has been also explored. A functional metal-oxide-semiconductor (MOS) based capacitor using the LaCeO film was fabricated in order to study current-voltage characteristics of the sampl

Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.

Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications

Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2