The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface

abstractEN: The effect of the n-type 4H-SiC (0001) oxidation in wet O2 at temperature of 1175 °C followed by low temperature annealing in N2O at temperature of 800C for 2 or 4 hours followed by high temperature annealing in nitrogen ambient on nitrogen distribution in silicon dioxide was investigated. It was shown that the oxidation and annealing have a strong impact on the behavior of electrical parameters of MOS capacitors using the oxides as gate dielectric what is probably an effect of nitrogen incorporation. The explanation of the observed electrical properties is included.score: 5collation: 753-75

Influence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

abstractEN: This paper describes the effects of phosphorus implantation into n-type 4H-SiC substrate prior to standard dry oxidation process. Phosphorus incorporation has been reported to be one of the most efficient means of increasing SiC MOSFET field mobility however the physical basis of this phenomenon is still not clear. The aim of this research is to investigate the influence of phosphorus implantation on trap density profile close to conduction band of silicon carbide and to gain understanding of physical processes responsible for observed trap density improvement in phosphorus related oxidation technologies of silicon carbide.score: 15collation: 496-49

Influence of nitrogen implantation on electrical properties of Al/SiO2/4H-SiC MOS structure

abstractEN: An influence of nitrogen implantation dose on the properties of MOS structure is analyzed. The properties are investigated using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that the trap density is derectly related to implantation damage and conditions.score: 5collation: 733-73