Bioactivity and corrosion behavior of magnesium barrier membranes

In the current research, magnesium and its alloys have been intensively studied as resorbable implant materials. Magnesium materials combine their good mechanical properties with bioactivity, which make them interesting for guided bone regeneration and for the application as barrier membranes. In this study, the in vitro degradation behavior of thin magnesium films was investigated in cell medium and simulated body fluid. Three methods were applied to evaluate corrosion rates: measurements of (i) the gaseous volume evolved during immersion, (ii) volume change after immersion, and (iii) polarization curves. In this comparison, measurements of H2 development in Dulbecco's modified Eagle's medium showed to be the most appropriate method, exhibiting a corrosion rate of 0.5 mm·year−1. Observed oxide and carbon contamination have a high impact on controlled degradation, suggesting that surface treatment of thin foils is necessary. The bioactivity test showed positive results; more detailed tests in this area are of interest

Non-destructive low-temperature contacts to MoS2\textrm{MoS}_2 nanoribbon and nanotube quantum dots

Molybdenum disulfide nanoribbons and nanotubes are near-one dimensional semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, we demonstrate that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of $100\textrm{k}\Omega$ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices using low-work function metals as contacts. Single level quantum transport is observed at temperatures below 100mK.Comment: 7 pages, 5 figure

Electrical detection of ferromagnetic resonances with an organic light-emitting diode

Organic semiconductors show strong magnetic-field effects in transport and luminescence because of inherently spin-dependent recombination. We explore whether paramagnetic resonance features can be enhanced in a hybrid structure comprising a thin yttrium iron garnet (YIG) film, undergoing ferromagnetic resonance (FMR) and an organic light-emitting diode (OLED). We investigate the effect of radio-frequency (RF) driving of this hybrid structure in a magnetic field. Under these conditions, an indirect bolometric effect enables the detection of FMR driven in the YIG film in the DC resistance of the OLED. The increased RF power absorption of the YIG film under resonance gives rise to a heating of the magnetic film. Subsequent heat transfer to the OLED causes a change in transport characteristics of the device. Good agreement of this electrically detected signal is found with a direct measurement of the RF power absorption. Using temperature dependent measurements, the thermal nature of the resistance signal is confirmed

Spin current control of magnetism

Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical applications. A well-established concept to date uses gate voltages to control magnetic properties, such as saturation magnetization, magnetic anisotropies, coercive field, Curie temperature and Gilbert damping, by modulating the charge carrier population within a capacitor structure1-5. Note that the induced carriers are non-spin-polarized, so the control via the electricfield is independent of the direction of the magnetization. Here, we show that the magnetocrystalline anisotropy (MCA) of ultrathin Fe films can be reversibly modified by a spin current generated in Pt by the spin Hall effect. The effect decreases with increasing Fe thickness, indicating that the origin of the modification can be traced back to the interface. Uniquely, the change in MCA due to the spin current depends not only on the polarity of the charge current but also on the direction of magnetization, i.e. the change in MCA has opposite sign when the direction of magnetization is reversed. The control of magnetism by the spin current results from the modified exchange splitting of majority- and minority-spin bands, and differs significantly from the manipulation by gate voltages via a capacitor structure, providing a functionality that was previously unavailable and could be useful in advanced spintronic devices

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate-due to strong spin-orbit interaction-spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation

Anisotropic Polar Magneto-Optic Kerr Effect of Ultrathin Fe/GaAs (001) Layers du to Interfacial Spin-Orbit Interaction

We report the observation of the anisotropic polar magneto-optical Kerr effect in thin layers of epitaxial Fe/GaAs(001) at room temperature. A clear twofold symmetry of the Kerr rotation angle depending on the orientation of the linear polarization of the probing laser beam with respect to the crystallographic directions of the sample is detected for ultrathin magnetic films saturated out of the film plane. The amplitude of the anisotropy decreases with increasing Fe film thickness, suggesting that the interfacial region is the origin of the anisotropy. The twofold symmetry is fully reproduced by model calculations based on an interference of interfacial Bychkov-Rashba and Dresselhaus spin-orbit coupling

Entropy-limited topological protection of skyrmions

Magnetic skyrmions are topologically protected whirls that decay through singular magnetic configurations known as Bloch points. We used Lorentz transmission electron microscopy to infer the energetics associated with the topological decay of magnetic skyrmions far from equilibrium in the chiral magnet Fe1-xCoxSi. We observed that the lifetime tau of the skyrmions depends exponentially on temperature, tau similar to tau(0) exp(Delta E/k(B)T). The prefactor tau(0) of this Arrhenius law changes by more than 30 orders of magnitude for small changes of the magnetic field, reflecting a substantial reduction of the lifetime of skyrmions by entropic effects and, thus, an extreme case of enthalpy-entropy compensation. Such compensation effects, being well known across many different scientific disciplines, affect topological transitions and, thus, topological protection on an unprecedented level

Tracing Dirac points of topological surface states by ferromagnetic resonance

Ferromagnetic resonance is used to reveal features of the buried electronic band structure at interfaces between ferromagnetic metals and topological insulators. By monitoring the evolution of magnetic damping, the application of this method to a hybrid structure consisting of a ferromagnetic layer and a 3D topological insulator reveals a clear fingerprint of the Dirac point and exhibits additional features of the interfacial band structure not otherwise observable. The underlying spin-pumping mechanism is discussed in the framework of dissipation of angular momentum by topological surface states (TSSs). Tuning of the Fermi level within the TSS was verified both by varying the stoichiometry of the topological insulator layer and by electrostatic backgating and the damping values obtained in both cases show a remarkable agreement. The high-energy resolution of this method additionally allows us to resolve the energetic shift of the local Dirac points generated by local variations of the electrostatic potential. Calculations based on the chiral tunneling process naturally occurring in TSSs agree well with the experimental results

Pattern evolution and fluctuations in a magnetic model system

In pattern forming systems, such as out-of-plane magnetized ferromagnetic samples, magnetic patterns occur in a variety of shapes and sizes. The mechanism of pattern transformation is, however, not well understood due to the lack of experiments featuring sufficient spatial as well as temporal resolution. Since thermal fluctuations can be regarded as the main driving force for domain pattern transformations, a non-stroboscopic measurement technique is necessary. For this purpose, a photoemission electron microscope was equipped to obtain magnetic contrast by the effect of threshold photoemission magnetic circular dichroism. This measurement setup offers a high spatial (<100nm) as well as temporal (<450µs) resolution and was used to investigate the magnetic domain pattern of the ferromagnetic model system of ultrathin Fe and Ni films on Cu(001). Moreover, the transformation of domain patterns triggered by changes of external stimuli could be recorded and investigated. In addition, the fingerprint of different, local domain patterns (topological defects) have been analyzed with respect to thermal fluctuations. The threshold photoemission magnetic circular dichroism is explained in detail by a one-step as well as a three-step photoemission model calculation within the framework of LSDA+DMFT band structure calculations