Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy

The relaxation dynamics of the carriers through the defect levels in an epitaxial GaN film grown with an AlN buffer layer on Si has been performed on the femto-picosecond timescale, using ultrafast transient absorption spectroscopy (UFTS). The sample was pumped above and below the band gap and probed with a white light continuum (480-800 nm). A combination of bi and triple exponential decay functions at different probe wavelengths were used to fit the kinetic profile of the carriers in the defect continuum. Based on the UFTS measurements, a model is proposed which explains the dynamics in the shallow traps and deep level defects. Furthermore, to determine the role of the lattice in the relaxation dynamics, the experiment was conducted at a low lattice temperature of 4.2 K. The relaxation constants from the UFTS measurements confirm not only the presence of shallow and deep level defects but also the involvement of phonons in one of the relaxation processes

Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands

We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown on Ga/Si(553) substrate at tow temperature by N-2(+) ions implantation using a sputtering gun technique. The annealing of Ga/Si(553) (600 degrees C) followed by nitridation (2 key) shows the formation of high quality GaN TGNPI cross-section. TGNPI morphology has been confirmed by atomic force microscopy. Furthermore, these nano prism islands exhibit prominent ultra-violet luminescence peaking at 366 nm upon 325 nm excitation wavelength along with a low intensity yellow luminescence broad peak at 545 nm which characterizes low defects density TGNPI. Furthermore, the time-resolved spectroscopy of luminescent TGNPI in nanoseconds holds promise for its futuristic application in next generation UV-based sensors as well as many portable optoelectronic devices

Correlation of current-voltage-temperature analysis with deep level defects in epitaxial GaN films

The effect of temperature on the nature of metal-semiconductor system in a Au contact deposited on c-plane and a-plane GaN film was investigated by current-voltage (I-V) measurements. The I-V measurements have been obtained systematically at different temperatures ranging from room temperature (300 K) to low temperature (78 K). Photoluminescence measurements were obtained to investigate correlation between the growth conditions, the substrate used for the growth of GaN film, and the presence of deep level defects therein by equating with the yellow band luminescence. The resistance-voltage-temperature analysis indicates that a gradual shift of the nature of contact towards Schottky behavior takes place while moving from room temperature to low temperature. Additionally, memory effect like aberration is present at low temperature, which can be attributed to the presence of deep-level defects and carrier recombination therein

Surface chemistry and electronic structure of nonpolar and polar GaN films

Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0 degrees to 60 degrees, the Ga-O/Ga-N ratio varied from 0.11-0.23 for nonpolar and 0.17-0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 +/- 0.1 eV and 6.8 +/- 0.1 eV for nonpolar GaN film and 3.8 +/- 0.1 eV and 7.2 +/- 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface

Origin of surface electron accumulation and fermi level pinning in low energy ion induced InN/GaN heterostructure

InN/GaN heterostructure was fabricated via reactive low energetic Nitrogen ion (LENI at 300 eV) bombardment at lower substrate temperature (350 degrees C). X-Ray Photoemission spectroscopic (XPS) and Atomic Force Microscopic (AFM) measurements were performed to analyse the electronic structure, surface chemistry, band alignment, and the morphology of the grown heterostructure. XPS analysis revealed the evolution of InN structure with nitridation time, surface electron accumulation, fermi level pinning and the band offset of the grown InN/GaN hetero structure. The valence band and conduction band offsets (VBO & CBO) were calculated to be 0.49 +/- 0.19 eV and 2.21 +/- 0.1 eV and divulged the formation of a type-I heterojunction. A Fermi Level (FL) pinning of 1.5 +/- 0.1 eV above the conduction band minima was perceived and indicated towards strong downward band bending. The analysis of the VB spectra suggested that surface electron accumulation occurred due to the presence of metallic In-adlayer on the surface which resulted in FL pinning and the corresponding downward band bending. Atomic Force Microscopy analysis divulged the formation of smooth surface with granular structure. It was also observed that the growth parameters (e.g. substrate temperature) strongly influence the aforementioned surface and interfacial properties

Pit assisted oxygen chemisorption on GaN surfaces

A comprehensive analysis of oxygen chemisorption on epitaxial gallium nitride (GaN) films grown at different substrate temperatures via RF-molecular beam epitaxy was carried out. Photoemission (XPS and UPS) measurements were performed to investigate the nature of the surface oxide and corresponding changes in the electronic structure. It was observed that the growth of GaN films at lower temperatures leads to a lower amount of surface oxide and vice versa was observed for a higher temperature growth. The XPS core level (CL) and valence band maximum (VBM) positions shifted towards higher binding energies ( BE) with oxide coverage and revealed a downward band bending. XPS valence band spectra were de-convoluted to understand the nature of the hybridization states. UPS analysis divulged higher values of electronic affinity and ionization energy for GaN films grown at a higher substrate temperature. The surface morphology and pit structure were probed via microscopic measurements (FESEM and AFM). FESEM and AFM analysis revealed that the film surface was covered with hexagonal pits, which played a significant role in oxygen chemisorption. The favourable energetics of the pits offered an ideal site for oxygen adsorption. Pit density and pit depth were observed to be important parameters that governed the surface oxide coverage. The contribution of surface oxide was increased with an increase in average pit density as well as pit depth

Extenuation of Stress and Defects in GaN Films Grown on a Metal-Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on a metal organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by using plasma-assisted molecular beam epitaxy and demonstrated the impact of growth temperature on their structural, morphological, and optical properties. An in-plane compressive stress having a minimum value of 0.34 GPa has been investigated by vibrational spectroscopy. This alleviated stress was attributed to a less pitted and smoother surface morphology along with reduced threading dislocation densities. Moreover, photoluminescence measurements explicate reduced yellow band emissions relative to near-band edge emission for the film grown under optimum growth conditions. The stress-relaxed and defect-free crystalline GaN film can further be utilized for tremendous optoelectronic and photonic based applications

Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (11(2)over-bar0) sapphire grown by rf-molecular beam epitaxy

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (11 (2) over bar0) sapphire substrate via rf-plasma molecular beam epitaxy. Morphological analysis reveals the presence of small lateral size (30-70 nm) hexagonally shaped V-pits on the GaN films. These V-defects possibly contribute as the main source of non-radiative decay. High resolution X-ray diffraction reveals highly single crystalline GaN film grown on a-plane sapphire substrate where the threading dislocations are the cause of V-defects in the film. Photoluminescence measurement shows a highly luminescence band to band emission of GaN film at 3.41 eV along with a broad defect band emission centered at 2.2 eV. A detailed optical and electrical analysis has been carried out to study the defect states and related carrier dynamics for determining the efficacy of the film for device fabrication. The variation in the low temperature current voltage measurements confirms the presence of deep level defects in the mid-band gap region while transient spectroscopy shows that non radiative decay is the dominant relaxation mechanism for the photo excited-carriers from these defect states