Differentiability of fractal curves

While self-similar sets have no tangents at any single point, self-affine curves can be smooth. We consider plane self-affine curves without double points and with two pieces. There is an open subset of parameter space for which the curve is differentiable at all points except for a countable set. For a parameter set of codimension one, the curve is continuously differentiable. However, there are no twice differentiable self-affine curves in the plane, except for parabolic arcs

Magnetic Field Suppression of the Conducting Phase in Two Dimensions

The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the plane. The data suggest that in the limit of T -> 0 the conducting phase is suppressed by an arbitrarily weak magnetic field. We call attention to striking similarities to magnetic field-induced superconductor-insulator transitions

Spin Degree of Freedom in a Two-Dimensional Electron Liquid

We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at minima in the diagonal resistivity increases linearly with the concentration of ``spin-up'' electrons.Comment: 4 pages, RevTeX, 6 eps-figures, to appear in PR

On the Klein-Gordon equation and hyperbolic pseudoanalytic function theory

Elliptic pseudoanalytic function theory was considered independently by Bers and Vekua decades ago. In this paper we develop a hyperbolic analogue of pseudoanalytic function theory using the algebra of hyperbolic numbers. We consider the Klein-Gordon equation with a potential. With the aid of one particular solution we factorize the Klein-Gordon operator in terms of two Vekua-type operators. We show that real parts of the solutions of one of these Vekua-type operators are solutions of the considered Klein-Gordon equation. Using hyperbolic pseudoanalytic function theory, we then obtain explicit construction of infinite systems of solutions of the Klein-Gordon equation with potential. Finally, we give some examples of application of the proposed procedure

Possible Metal/Insulator Transition at B=0 in Two Dimensions

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evidence for electron localization is seen down to at least 20 mK. For $n_s<N_{cr}$, the sample is insulating. The resistivity is empirically found to SCALE WITH TEMPERATURE BOTH BELOW AND ABOVE $n_{cr}$ WITH A SINGLE PARAMETER which approaches zero at $n_s=n_{cr}$ suggesting a metal/ insulator phase transition.Comment: 10 pages; REVTeX v3.0; 3 POSTSCRIPT figures available upon request; to be published in PRB, Rapid Commu

Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field

Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states.Comment: 4 pages, 2 figure

Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field

The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening behavior of the electron gas. For impurity scattering we predict a positive magnetoresistance for low electron density and a negative magnetoresistance for high electron density. The theory is in qualitative agreement with recent experimental results found for Si inversion layers and Si quantum wells.Comment: 4 pages, figures included, PDF onl

Realistic model of correlated disorder and Anderson localization

A conducting 1D line or 2D plane inside (or on the surface of) an insulator is considered.Impurities displace the charges inside the insulator. This results in a long-range fluctuating electric field acting on the conducting line (plane). This field can be modeled by that of randomly distributed electric dipoles. This model provides a random correlated potential with decaying as 1/k . In the 1D case such correlations give essential corrections to the localization length but do not destroy Anderson localization

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.Comment: 5 pages, 2 figures, will appear in PRL (12 July, 1999

Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.Comment: 4 Figure