579 research outputs found
Polarization dependent Landau level crossing in a two-dimensional electron system in MgZnO/ZnO-heterostructure
We report electrical transport measurements in a tilted magnetic field on a
high-mobility two-dimensional electron system confined at the MgZnO/ZnO
heterointerface. The observation of multiple crossing events of spin-resolved
Landau levels (LLs) enables the mapping of the sequence of electronic states.
We further measure the renormalization of electron spin susceptibility at zero
field and the susceptibility dependence on the electron spin polarization. The
latter manifests the deviation from the Pauli spin susceptibility. As the
result, the crossing of spin-resolved LLs shifts to smaller tilt angles and the
first Landau level coincidence event is absent even when the magnetic field has
only a perpendicular component to the 2DES plane.Comment: 5 pages, 4 figure
Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias
We report on magnetotransport properties of a MgZnO/ZnO heterostructure
subjected to weak direct currents. We find that in the regime of overlapping
Landau levels, the differential resistivity acquires a quantum correction
proportional to both the square of the current and the Dingle factor. The
analysis shows that the correction to the differential resistivity is dominated
by a current-induced modification of the electron distribution function and
allows us to access both quantum and inelastic scattering rates.Comment: 4 pages, 3 figure
Temperature dependent magnetotransport around = 1/2 in ZnO heterostructures
The sequence of prominent fractional quantum Hall states up to =5/11
around =1/2 in a high mobility two-dimensional electron system confined at
oxide heterointerface (ZnO) is analyzed in terms of the composite fermion
model. The temperature dependence of \Rxx oscillations around =1/2
yields an estimation of the composite fermion effective mass, which increases
linearly with the magnetic field. This mass is of similar value to an enhanced
electron effective mass, which in itself arises from strong electron
interaction. The energy gaps of fractional states and the temperature
dependence of \Rxx at =1/2 point to large residual interactions between
composite fermions.Comment: 5 pages, 4 Figure
Electron scattering times in ZnO based polar heterostructures
The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10⁶ cm²/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors
Ultrafast optical control of magnetization in EuO thin films
All-optical pump-probe detection of magnetization precession has been
performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the
circularly-polarized light can be used to control the magnetization precession
on an ultrafast time scale. This takes place within the 100 fs duration of a
single laser pulse, through combined contribution from two nonthermal
photomagnetic effects, i.e., enhancement of the magnetization and an inverse
Faraday effect. From the magnetic field dependences of the frequency and the
Gilbert damping parameter, the intrinsic Gilbert damping coefficient is
evaluated to be {\alpha} \approx 3\times10^-3.Comment: 5 pages, 3 figures, accepted for publication in Phys. Rev.
Precise calibration of Mg concentration in Mg_xZn_(1−x)O thin films grown on ZnO substrates
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of Mg_xZn_(1−x)O thin films grown on ZnO substrates, ranging from the solubility limit of x ∼ 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by x-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the Mg_xZn_(1−x)O peak in standard laboratory equipment, and thus limits quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the Mg_xZn_(1−x)O films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that x-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment
- …