CMS Barrel Pixel Detector Overview

The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of the pixel barrel detector, its mechanical support structure, electronics components, services and its expected performance.Comment: Proceedings of Vertex06, 15th International Workshop on Vertex Detector

Design and Performance of the CMS Pixel Detector Readout Chip

The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded. We present the architecture of the final CMS pixel detector readout chip with special emphasis on the analog readout chain. Measurements of its performance are discussed.Comment: 8 pages, 11 figures. Contribution to the Proceedings of the Pixel2005 Workshop, Bonn, German

Qualification Procedures of the CMS Pixel Barrel Modules

The CMS pixel barrel system will consist of three layers built of about 800 modules. One module contains 66560 readout channels and the full pixel barrel system about 48 million channels. It is mandatory to test each channel for functionality, noise level, trimming mechanism, and bump bonding quality. Different methods to determine the bump bonding yield with electrical measurements have been developed. Measurements of several operational parameters are also included in the qualification procedure. Among them are pixel noise, gains and pedestals. Test and qualification procedures of the pixel barrel modules are described and some results are presented.Comment: 7 Pages, 7 Figures. Contribution to Pixel 2005, September 5-8, 2005, Bonn, Germna

The CMS Pixel FED

The innermost detector of the CMS Experiment consists of 66 million silicon pixels. The hit data has to be read out and must be digitized, synchronized, formatted and transferred over the S-Link to the CMS DAQ. The amount of data can only be handled because the readout chip (ROC) delivers zero-suppressed data above an adjustable threshold for every pixel. The Pixel FED 9U VME module receives an analog optical signal, which is subsequently digitized and processed. The position of the pixel on a module is transmitted with five symbols coded in six pulse height steps each. The data of 36 inputs build a final event data block. The data block from each detector module with either 16 or 24 ROCs differs in length and arrival time. Depending on the data length and trigger rate, there can be a skew of several events between any two inputs. That is possible because the ROC has a multievent time stamp memory and the readout bandwith is limited. Finally the information processed by the Pixel FED will be transferred over the S-Link to the CMS DAQ. Each module must be able to process a trigger rate of 100 kHz or, if in trouble, to send an alarm signal. The number of inputs is limited by the maximum data transmission rate of the S-Link (640 MB/s) for the expected high luminosity of LHC. The data flow on the module is continuously controlled. Errors are written in an error memory, included in the data stream and if critical sent to the general CMS readout control

Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.Comment: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth.

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.Comment: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005 Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee comments and to fix broken reference link

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.Comment: Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figure

Approximate particle number projection for finite range density dependent forces

The Lipkin-Nogami method is generalized to deal with finite range density dependent forces. New expressions are derived and realistic calculations with the Gogny force are performed for the nuclei $^{164}$Er and $^{168}$Er. The sharp phase transition predicted by the mean field approximation is washed out by the Lipkin-Nogami approach; a much better agreement with the experimental data is reached with the new approach than with the Hartree-Fock_Bogoliubov one, specially at high spins.Comment: 5 pages, RevTeX 3.0, 3 postscript figures included using uufiles. Submitted to Phys. Rev. Let

Three-nucleon mechanisms in photoreactions

The $^{12}$C$(\gamma,ppn)$ reaction has been measured for E$_{\gamma}$=150-800 MeV in the first study of this reaction in a target heavier than $^3$He. The experimental data are compared to a microscopic many body calculation. The model, which predicts that the largest contribution to the reaction arises from final state interactions following an initial pion production process, overestimates the measured cross sections and there are strong indications that the overestimate arises in this two-step process. The selection of suitable kinematic conditions strongly suppresses this two-step contribution leaving cross sections in which up to half the yield is predicted to arise from the absorption of the photon on three interacting nucleons and which agree with the model. The results indicate $(\gamma,3N)$ measurements on nuclei may be a valuable tool for obtaining information on the nuclear three-body interaction.Comment: 5 pages, 3 figure